PTVA104501EH-V1-R0

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	960MHz ~ 1.215GHz
Gain:	17.5dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	200mA
Power - Output:	450W
Voltage - Rated:	105V
Package / Case:	H-33288-2
Supplier Device Package:	H-33288-2

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Introduction

The PTVA104501EH-V1-R0 is an RF power field-effect transistor (FET) module, specifically designed for All-Digital Class B High Efficiency Amplifier (HPA) applications. The device is housed in a small package, typically used in power amplifiers for a variety of wireless applications, such as radio and broadcast communications, wireless infrastructure and mobile wireless devices.

Application Field

The PTVA104501EH-V1-R0 is widely used in radio, broadcast, and wireless infrastructure applications, including mobile communications, broadband wireless networks, and WLAN systems. This module is capable of delivering high power gain and low noise performance, and is suitable for the design of high-efficiency, low-spuriousness amplifiers. Moreover, it is an ideal choice for high power, high frequency amplifiers operating in the 800 MHz to 5 GHz frequency range.

Working Principle

The PTVA104501EH-V1-R0 is a monolithic RF power field effect transistor (FET) module based on silicon on insulator technology. It uses three power transistors connected in the common source configuration to provide high power gain. Each device is individually tuned for optimal efficiency by controlling the bias voltage. The device utilizes a positive voltage gate to ensure predictable gain characteristics.Basically, the device functions as a voltage-controlled amplifier. When an input signal is applied to the gate of the device, the bias voltage is modulated and the amount of electrons passing through the gate is regulated. This modulated electron flow directly controls the current and voltage gain of the output signal. As the input signal increases, the gate current flows, which increases the output current, resulting in a corresponding increase in voltage gain.

Conclusion

The PTVA104501EH-V1-R0 is a high power, high-efficiency RF power FET module designed for All-Digital Class B HPA applications. The module enables high power gain and low noise performance, and is suitable for the design of high-efficiency, low-spuriousness amplifiers operating in the 800 MHz to 5 GHz frequency range. The device utilizes a positive voltage gate to ensure predictable gain characteristics, and functions as an amplifier that modulates the electron flow to control the current and voltage gain.

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