PTVA123501EC-V2-R0

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.2GHz ~ 1.4GHz
Gain:	17dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	150mA
Power - Output:	350W
Voltage - Rated:	105V
Package / Case:	H-36248-2
Supplier Device Package:	H-36248-2

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<h2>PTVA123501EC-V2-R0 application field and working principle</h2><p>PTVA123501EC-V2-R0 is a N-channel Enhancement type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with high input capacitance, low internal losses, and outstanding power transfer efficiency. It is specifically designed for RF (Radio Frequency) applications and its application fields range from consumer electronics to automotive electronics, robotics, industrial control and automation, communication, renewable energy, and more.</p><p>MOSFETs are primarily used as analog amplifiers and switches, allowing them to control large amounts of power with minimal current. PTVA123501EC-V2-R0 is no exception, as it has a maximum drain current of 4.5A and a maximum drain voltage of 20V. It is a unipolar (the gate voltage is used to control the device) transistor that uses the field-effect principle to control its current conduction, making it a prime choice for power electronics and RF applications.</p><p>The working principle of a MOSFET is relatively simple: when a voltage is applied to the transistor’s gate, a conductive channel is formed between the source and the drain. This channel, known as an inversion layer, is what allows current to flow through the transistor. The higher the gate voltage, the wider the channel and the greater the current that can pass through it. As the gate voltage increases, the channel gets thinner and the current reduces.</p><p>PTVA123501EC-V2-R0 has an operating temperature range of 0 - 85°C and an ESD tolerance of 2KV HBM. It is a robust, reliable and efficient device that is capable of handling large amounts of power with minimal power dissipation.</p><p>PTVA123501EC-V2-R0 is an excellent choice for a variety of RF applications, including radio transmitters, receivers, transceivers, amplifiers, and more. The transistor’s low on-resistance, high current capacity, and low thermal resistance make it ideal for high-power RF applications, while its ESD protection ensures that it will perform reliably in extreme environments.</p><p>In conclusion, PTVA123501EC-V2-R0 is an excellent choice for a variety of RF applications, from consumer electronics to industrial automation, due to its robust design, high current capacity, and low power dissipation. Its sophisticated field-effect principle makes it an excellent choice for high-power digital applications, while its ESD protection ensures that it will perform reliably in the most challenging environments.</p>

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