Allicdata Part #: | PTVA120501EAV1XWSA1-ND |
Manufacturer Part#: |
PTVA120501EAV1XWSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet |
DataSheet: | PTVA120501EAV1XWSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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PTVA120501EAV1XWSA1 is a type of Field Effect Transistor used in radio frequency (RF) applications. A transistor is a semiconductor device used to amplify or switch electronic signals. FETs (Field Effect Transistors) are a special type of transistor that uses electric fields instead of a physical connection to control current flow. As such, they are very useful for RF applications because of their low power consumption and high frequency characteristics.The PTVA120501EAV1XWSA1 is a N-Channel Enhancement Mode MOSFET, which means it has an extra gate pin and a higher voltage larger than normal FETs. Like other FETs, the PTVA120501EAV1XWSA1 uses the principle of electrostatic control to regulate the current passing through it. When a voltage is applied to the gate pin, it causes a field to be set up around the gate, which, in turn, attracts or repels electrons from the channel. This in turn controls the current flow passing through the channel. This effect is desirable in RF applications due to the fact that the gate pin can be quickly switched on and off to enable or disable the current flow. This allows for rapid frequency changes and subtle control over the amount of current passing through the FET. Furthermore, RF transistors are usually in a high impedance state, which means they draw very little current even when they are on and they can be combined with other components to increase overall efficiency. The PTVA120501EAV1XWSA1 also has a low capacitance across the drain and source pins, which helps boost its switching speed and reduce distortion of the signals passing through it.In conclusion, the PTVA120501EAV1XWSA1 is a high performance transistor that is specifically designed for RF applications. It has a relatively low power consumption, high frequency characteristics, and an ability to quickly switch between high and low impedance states. Its extra gate pin and low capacitance across the drain and source pins enhance its switching speed and reduce distortion of signals passing through it.
The specific data is subject to PDF, and the above content is for reference
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