R1LV0108ESF-7SR#B0

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP (8x20)
Base Part Number:	R1LV0108E

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Memory: R1LV0108ESF-7SR#B0 ApplicationField and Working Principle

R1LV0108ESF-7SR#B0 is an integrated memory storage system developed by Sanyo Electric Co. Ltd for data storage and retrieval. It is a high-speed, 1 byte page programmable, serial Flash solution designed for use in various products and applications. This serial Flash memory is available in both 8-pin SOIC and 8-pin TSSOP packages, and provides densities of up to 32Mbits.The R1LV0108ESF-7SR#B0 is a single voltage Flash device that operates over the 1.8 - 3.6V power supply range. This device includes an integrated programmable register, allowing very fast programming and a reliable write protection technique. This device is also equipped with an integrated ECC (Error Correction Code) function. The module is accessible through the SPI and Quad I/O serial interface protocols, allowing faster read and write cycles.The R1LV0108ESF-7SR#B0 is widely used in a variety of applications including consumer electronics, automotive, medical, industrial and aerospace applications. It is an ideal choice for data storage and retrieval when long life storage and retrieval are required. For example, the device is widely used for storing application software and firmware in consumer electronic products such as gaming consoles and Media players. In consumer electronics industry, this device offers different read/write and program times. High cycle data retention is guaranteed over the life time of the product. In addition, the device eliminates the need for additional programming components, reducing the cost of the system.The R1LV0108ESF-7SR#B0 is designed to provide high performance and reliable operations in various markets and applications. Its high data retention and low power consumption makes it a great choice for power sensitive applications. The device has been designed to provide a reliable data storage and retrieval performance with low EMI (electromagnetic interference) level. The data stored on the device is also protected from unauthorized access by the integrated security features.In terms of operation, the device has two distinct modes. In Read mode, the device can read up to 16 bytes of data from a single page in a single operation. In Program mode, data is written to the memory in multiple blocks, with the data recorded in a specific sequence. The R1LV0108ESF-7SR#B0 also includes built-in ECC functionality, which helps to maintain data integrity during write operations and improves the reliability by detecting and correcting any errors during the read operation.Overall, the R1LV0108ESF-7SR#B0 is an excellent choice for low power and high performance memory applications where reliability, fast access, and data security are of primary importance. It is a great choice for data storage and retrieval in industrial and consumer electronics applications, and is available in various form factors and capacities to fit any customer requirement.

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