| Allicdata Part #: | R1LV0108ESF-7SR#S0-ND |
| Manufacturer Part#: |
R1LV0108ESF-7SR#S0 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Renesas Electronics America |
| Short Description: | IC SRAM 1M PARALLEL 32TSOP |
| More Detail: | SRAM Memory IC 1Mb (128K x 8) Parallel 70ns 32-TS... |
| DataSheet: |  R1LV0108ESF-7SR#S0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM |
| Memory Size: | 1Mb (128K x 8) |
| Write Cycle Time - Word, Page: | 70ns |
| Access Time: | 70ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 32-TSOP (8x20) |
| Base Part Number: | R1LV0108E |
Description
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Memory – R1LV0108ESF-7SR#S0 Application Field and Working Principle
Memory is a fundamental component of any computing system. It allows us to store, access, and manipulate data. In particular, Random Access Memory (RAM) is the most common type of memory and provides fast access to large amounts of data.The R1LV0108ESF-7SR#S0 is a type of double-data-rate (DDR) Synchronous Dynamic Random Access Memory (SDRAM), which is typically used in personal computers. It is a leading device in the industry and is used in a variety of applications.The R1LV0108ESF-7SR#S0 incorporates advanced design and manufacturing technologies to provide high data transfer rates and excellent reliability. The device is built using a state-of-the-art copper-interconnect process and is optimized for use in next-generation personal computers and workstations.The R1LV0108ESF-7SR#S0 is a high-performance, low-power SDRAM device. It features a double-data-rate (DDR) architecture and operates at speeds of up to 800MHz. The device offers a 8-bit data bus and 48-bit address interface and includes a programmable active power-down management mode. The device is available in a 48-ball FBGA package.This memory device works by allowing the computer to access data on the fly, meaning quicker access times and higher processing speeds for the user. To facilitate this, the device features a read-modify-write burst architecture, which allows simultaneous read and write accesses to the memory. The device also utilizes a burst mode operation, which allows the system to process a large number of consecutive operations in a single transaction. The device also has an auto refresh and auto pre-charge capability, which enables the device to operate in low-power mode while still delivering high performance. Additionally, the device utilizes an On-Die Termination (ODT) feature, which helps reduce power consumption and improve signal integrity.To ensure reliability, the device is designed to support Error Correcting Code (ECC) operations and uses advanced algorithms to detect, identify, and correct errors. The device also supports S.M.A.R.T., which monitors the health of the device and allows the system to determine when maintenance is necessary.In conclusion, the R1LV0108ESF-7SR#S0 is a leading memory device in the industry, offering excellent performance and reliability. The device utilizes advanced features, such as ECC and On-Die Termination, to ensure stable operation and robust data protection. The R1LV0108ESF-7SR#S0 is ideal for use in next-generation personal computers and workstations.The specific data is subject to PDF, and the above content is for reference
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