Allicdata Part #: | R1LV1616RSA-7SI#B0-ND |
Manufacturer Part#: |
R1LV1616RSA-7SI#B0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 16M PARALLEL 48TSOP |
More Detail: | SRAM Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70... |
DataSheet: | R1LV1616RSA-7SI#B0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 16Mb (2M x 8, 1M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TSOP |
Supplier Device Package: | 48-TSOP |
Base Part Number: | R1LV1616R |
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R1LV1616RSA-7SI#B0 is a memory device that is primarily used for data storage. It is commonly employed in industrial, aerospace, military, and automotive applications. It has high density, reliability, and instant availability for use. Additionally, the device has the capability to store detailed information over long periods of time without degradation.
The R1LV1616RSA-7SI#B0 memory device consists of a memory core and a controller. The memory core is composed of 16,384 x 8 bits of non-volatile random access memory (NVRAM). It is typically organized into 256KB of memory and provides a data transfer rate of up to 8 MB/s.
The controller provides all the interface and control functions necessary to read and write data in the memory core. It features a read/write address counter, burst read/write capability and address translation, as well as an address validator. There are also two programmable I/O ports, which are accessed with various commands.
The R1LV1616RSA-7SI#B0 memory device is used in a wide variety of applications, including data logging, industrial automation, cache storage, military systems, and aerospace applications. The device is also widely used for embedded systems, post-test data collection, and simulated-logic verification.
The working principle of R1LV1616RSA-7SI#B0 memory device is to utilize an internal address and data bus for data transfer. When the device is read or written, all relevant information is provided to the controller via the address/data bus. The controller then uses the address translators to match the address to the location of the data in the device’s memory core.
The controller is programmed with the start and stop addresses of the read/write operation. The internal address counter is then loaded with the start address and is incremented by 0x1 upon each read or write operation. Once the device’s internal counter reaches the stop address, the read/write operations stop.
The R1LV1616RSA-7SI#B0 memory device features an ECC (error-correcting code) to protect against data corruption. This ECC is used to detect and correct single-bit errors that may occur while the data is being written or read. To ensure accurate data transmission, the device also has parity check in addition to the ECC.
The R1LV1616RSA-7SI#B0 memory device is a reliable, high-density device that is particularly suited for industrial, military, aerospace, and automotive applications. Its ability to store detailed information over long periods of time without degradation makes it an ideal solution for these industries. In addition, its reliability and high speed make it a good choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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R1LV0108ESF-5SI#S0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
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