R1LV1616RSD-7SI#S0

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	52-TFSOP (0.350", 8.89mm Width)
Supplier Device Package:	52-TSOP II
Base Part Number:	R1LV1616R

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

R1LV1616RSD-7SI#S0 is a memory device developed by a digital manufacturer to meet the demands of high performance systems that require large amounts of memory capacity. This memory device has been proven to provide higher speeds and reliable performance. It offers a low-cost solution to increase system speed, improve reliability, and enhance performance.

Application Field

R1LV1616RSD-7SI#S0 memory device is primarily used in high-performance computers and servers. It can also be used in embedded systems, telecom systems, gaming machines and workstations, industrial automation, and aerospace applications. It is capable of storing a large amount of data quickly and efficiently, making it an ideal choice for applications that require high speed data access.

Working Principle

The R1LV1616RSD-7SI#S0 memory device uses static random-access memory (SRAM) technology to store and access data. SRAM is a type of random access memory which is composed of a matrix of transistors, capacitors, and other electronic components. SRAM has the benefit of faster access times compared to DRAM, as well as higher efficiency, making it an ideal solution for applications that require high speed memory access.When data is written to the device, the SRAM stores the data by setting the state of specific cells in the memory matrix. When data is read or written, the SRAM detects which cells contain data, and makes use of the appropriate control signals to access the stored data. Once the data has been read or written, the SRAM cells return to their default state and the memory is reset.The advantage of using SRAM technology for memory storage is that it offers higher speed data access, improved signal integrity compared with Dynamic Random Access Memory (DRAM), and increased efficiency. Furthermore, SRAM technology is more reliable as it can retain data even when power is removed from the memory device.

Conclusion

In conclusion, the R1LV1616RSD-7SI#S0 memory device is an excellent solution for high performance systems that require large amounts of memory capacity. This device is suitable for a range of applications, offering improved signal integrity and efficient data storage. The use of static random-access memory (SRAM) technology ensures that data can be stored and accessed quickly and reliably.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description