RN2902,LF(CT Discrete Semiconductor Products |
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Allicdata Part #: | RN2902LF(CTTR-ND |
Manufacturer Part#: |
RN2902,LF(CT |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2902,LF(CT Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.03195 |
6000 +: | $ 0.02778 |
15000 +: | $ 0.02362 |
30000 +: | $ 0.02223 |
75000 +: | $ 0.02084 |
150000 +: | $ 0.01852 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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The RN2902 LF is a pre-biased, bipolar, array transistor. It uses multiple electric charge carriers, generates an output signal from an input control node, and is capable of providing multiple output configurations. This type of transistor is typically used in applications that require very low-noise, good distortion performance and excellent performance in high frequency circuits.
The transistor array structure of the RN2902 LF is made up of two vertical elements which are coupled to each other in order to make up an active biasing element. The left terminal of the active biasing element is connected to the substrate, while its right terminal is connected to a constant voltage source. The base of the vertical elements is connected to the emitter of the active biasing element.
The working principle of the RN2902 LF is such that its active biasing element allows the transistor to be pre-biased before it is turned on. This means that when the transistor is turned on, it is already in the desired operating condition, which allows for better efficiency and higher performance. Additionally, the pre-biasing element acts as a protection from unnecessary voltages, ensuring that the transistor does not experience thermal runaway.
In terms of CT applications, the RN2902 LF is mainly used in wireless telecom systems, WiFi and other RF specific applications such as radio frequency identification (RFID) systems. Furthermore, it is also suitable for the design of local oscillator in ZigBee systems. This type of transistor is well suited for low-noise, good distortion performance and excellent performance in high frequency circuits, which makes it ideal for use in applications such as RF receivers and RF transmitters.
The RN2902 LF is also used in analog signal processes such as signal conditioning, signal amplification, and attenuation. Additionally, the transistor can also be used for signal switching and for applications that require smooth gain control. This type of transistor is also suitable for analog filters, voltage controlled oscillators, and power management.
Overall, the RN2902 LF is a pre-biased, bipolar, array transistor that offers low-noise, good distortion performance, and excellent performance in high frequency circuits. It is suitable for applications in wireless telecom systems, WiFi and other RF specific applications such as RFID systems, and can also be used for signal conditioning, signal amplification and attenuation, signal switching, and power management. The RN2902 LF is an excellent choice when a low-noise and distortion performance is necessary in your design.
The specific data is subject to PDF, and the above content is for reference
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