RN2970FE(TE85L,F) Discrete Semiconductor Products |
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| Allicdata Part #: | RN2970FE(TE85LF)TR-ND |
| Manufacturer Part#: |
RN2970FE(TE85L,F) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
| DataSheet: |  RN2970FE(TE85L,F) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 200MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | ES6 |
Description
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The RN2970FE(TE85L,F) is a type of transistor array. It is a pre-biased transistor array, which is part of the bipolar transistor (BJT) family. Such transistor arrays are mainly used for audio amplifier and voltage level shifting applications. In recent times, it has also found its use in automotive, consumer electronics, and telecommunications. The RN2970FE(TE85L,F) comprises of three sets of NPN transistors, namely Q1-Q3, Q6-Q8, Q11-Q13. Each set is paired with a three-terminal resistor connected to bias the transistors. One can use the RN2970FE(TE85L,F) to make a pre-biased array of bipolar transistors. By controlling the current through the three-terminal resistors, one can adjust the bias of each NPN transistor independently of the others. The pre-biased condition in the RN2970FE(TE85L,F) helps reduce thermal design issues, like the differences between the equivalent circuits of NPN and PNP transistors. It also ensures constant gain over the full temperature range. As a result, the RN2970FE(TE85L,F) is an ideal choice for many applications where stable operation and precise control are desired. The RN2970FE(TE85L,F) is used to amplify small AC signals. Its low signal-to-noise ratio, which is the ratio of the effective power of the signal to the power of the noise, makes it suitable for audio amplifier applications. By using this pre-biased transistor array, one can get precise gain control with minimal noise. The RN2970FE(TE85L,F) can also be used as a voltage level shifter. By using either the NPN transistor or the PNP transistor, one can shift the signal from one voltage level to another. This device is especially useful in low-power applications, where the voltage levels can vary. By using the RN2970FE(TE85L,F), one can easily adjust the voltage levels with minimal power consumption. In conclusion, the RN2970FE(TE85L,F) is a type of pre-biased transistor array that is suitable for audio amplifier and voltage level shifting applications. It has low signal-to-noise ratio and precise gain control, making it ideal for many applications. Additionally, it is easy to adjust the voltage levels with minimal power consumption.
The specific data is subject to PDF, and the above content is for reference
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