RN2961FE(TE85L,F) Discrete Semiconductor Products

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The RN2961FE(TE85L,F) is a device designed specifically for use in transistors - bipolar (BJT) - arrays, pre-biased applications. It is an exceptionally robust and versatile array of transistors with excellent thermal performance that can handle a wide range of electrical power, ensuring that the transistors it contains provide users with reliable and stable performance.

The purpose of the RN2961FE(TE85L,F) is to provide users with a convenient and cost-effective method of connecting multiple transistors in an array that offers low operating costs, and the potential for enhanced power handling. As such, the device combines the benefits of a fast-switching bipolar transistor array, providing optimal performance for applications requiring high speed and good power handling, with the reliability of a low-power pre-biased array, allowing users to plug-and-play their transistors for quick, easy installation.

At the heart of the RN2961FE(TE85L,F) is a unique array architecture consisting of two resistors and two transistors. The resistors maintain a biasing voltage across the transistors, allowing them to operate without any additional bias current. This allows the transistors to carry up to four Amps of current, while handling up to 25 Volts of power, enabling robust and reliable performance.

The four elements of the RN2961FE(TE85L,F) combine to form a versatile and flexible device that is designed to provide users with the means to dynamically control the current and power capabilities of the transistors in their array. The device also provides up to 0.2 dB of gain, enabling users to maximize the amount of energy delivered to their transistors.

In addition to its array architecture, the RN2961FE(TE85L,F) includes several other features that allow it to perform within a wide range of applications. Its wide operating temperature range, from -55° to +125° Celsius, allows the device to be used in extreme conditions, and its high insulation resistance ensures users can reliably transfer signals without interference. The device also includes protection from electrostatic discharge and voltage transients, making it suitable for use even in electrically noisy environments.

The RN2961FE(TE85L,F) also allows for simple integration with other electronics, making it ideal for use with logic chips and analog-to-digital converters. Its low stand-by current and high power handling capabilities make it an ideal choice for use in high-power switching applications that require energy efficiency.

Overall, the RN2961FE(TE85L,F) is a reliable, robust and versatile solution for transistors - bipolar (BJT) - arrays, pre-biased applications that provides users with an affordable and efficient way to connect multiple transistors in an array, while also offering up to 0.2 dB of gain, excellent thermal performance and reliable ESD protection.

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