RN2901(T5L,F,T)

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RN2901 (T5L, F, T) Application Field and Working Principle

RN2901 (T5L, F, T) is a pre-biased bipolar junction transistor (BJT) array from Texas Instruments that is designed for application in a wide range of wireless communication products, from consumer mobile phones to multi-input multi-output (MIMO) wireless infrastructure products.

RN2901 (T5L, F, T) has two transistors in one device, offering a lower resistor for the base of the transistors and additional protection against over-voltage conditions. The dual transistor array offers good current gain and is well-suited for operating conditions with higher temperatures than other BJT arrays.

Design

RN2901 (T5L, F, T) consists of two NPN transistors on a single component: the collector of the PNP transistor is connected directly to the emitter of the NPN transistor and the emitter of the PNP transistor is connected in common to the collector of the NPN transistor. The internal resistor of 200 ohms provides a bias current, giving a fast operational time. This resistor is intended to reduce switching losses and reduce false triggering from voltage transients.

The component also provides ESD protection and low on-capacitance for high switching speeds. It has a maximum current gain of 500 at 20mA and has a maximum power dissipation of 500mW. The component operates on 1.8V and has a sampling rate of 10MHz.

Application Fields

RN2901 (T5L, F, T) is designed for application in a wide range of wireless communication products, includingconsumer mobile phones, satellite receivers, receivers for Wi-Fi and Bluetooth communication, radio transceivers as well as multi-input multi-output (MIMO) wireless infrastructure products.

RN2901 (T5L, F, T) has been designed for wireless communication products and is best suited for high-speed, low-power applications that require low cross-talk and high isolation. It offers a low adjustment time of only 5nS and can operate from -40°C to +125°C.Overall, the component offers low power consumption, high switching speed and excellent RF performance, making it ideal for applications that require all three.

Working Principle

The RN2901 (T5L,F,T) operates using two transistors in a single device. The collector of the PNP transistor is connected directly to the emitter of the NPN transistor and the emitter of the PNP is connected in common to the collector of the NPN transistor.

The internal resistor provides a bias current, which allows the transistors to operate. The bias current reduces switching losses and reduces the possibility of false triggering from voltage transients. The array provides a fast switching speed and can be used in high-speed applications.

The component also provides ESD protection and low on-capacitance for high switching speeds. The maximum current gain of 500 at 20mA, maximum power dissipation of 500mW and a sampling rate of 10MHz make the component suitable for use in a wide range of wireless communication applications.

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