RN2963(TE85L,F) Discrete Semiconductor Products

Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V

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• Introduction:

RN2963(TE85L,F) is a Bipolar Junction Transistor (BJT) array pre-biased device. It is composed of two N-type Silicon (N-Si) Power Transistors that are connected together in an integrated package and provide high-current gains and improved thermal performance.

• Application Field:

The RN2963 is an excellent choice for both low-power and high-load applications. This pre-biased array is suitable for use in circuits that require large current and high-speed switching in digital or analog electronics. It is also a great choice for audio and video circuitry, high-performance power regulation, and in various industrial applications.

• Features:

The RN2963 offers a number of features that make it well-suited for a variety of applications. This device offers a wide current range from 1A to 5A, with very good thermal performance. It also has a frequency range from DC to 500 kHz and has low power consumption levels. In addition, the device has very low EMI emissions and excellent power handling capabilities.

• Working Principle:

The RN2963 is a pre-biased device, meaning that it comes with a voltage-controlled gate that provides preset gate bias to the transistors in the device. This feature helps to reduce the power consumption and maintain high-level stability during operation.The device connects two N-type silicon (N-Si) power transistors in an integrated package. This arrangement helps to reduce thermal stress by allowing the transistors to share its heat load and to efficiently disperse the heat generated.The maximum current rating of the RN2963 depends on the type of N-Si transistor used in the device. In addition, the short-circuit protection capability of the device is an important factor while choosing the right transistor.

• Conclusion:

In conclusion, the RN2963 is an N-type Silicon (N-Si) Power Transistor Array pre-biased device that provides good thermal performance and reliable active/inactive state switching. It is suitable for low-power, high-load applications, has a wide frequency range, offers low EMI emissions, and can handle very good power handling levels.

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