Allicdata Part #: | RN2971(TE85LF)TR-ND |
Manufacturer Part#: |
RN2971(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2971(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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Bipolar junction transistors (BJTs) are three-terminal active components that are commonly used as a switch or amplifier in various electrical circuits. The RN2971 (TE85L,F) is an example of a BJT array that is pre-biased and has the ability to provide an in-line complementary output signal, with a low power consumption. This article looks at the application field and working principle of the RN2971 (TE85L,F) BJT array.
RN2971 (TE85L,F) Application Field
The RN2971 (TE85L,F) is typically used in applications such as bipolar driver circuits, DC control circuits, hammer drivers, lamp drivers, and power supply relays. It can also be used as an inverting amplifier, voltage regulator, or general purpose amplifier. The wide range of application fields for this BJT array is due to its low power consumption, high speed, and high cost efficiency.
RN2971 (TE85L,F) Working Principle
The RN2971 (TE85L,F) consists of two complementary BJT transistors. The emitter of one is connected to the collector of the other, and both are connected to the same reference voltage. This reference voltage provides the pre-bias that is necessary to make the transistors conduct. By adjusting the pre-bias, the transistors can be made to conduct either more or less current.
The RN2971 (TE85L,F) also includes a series of bias resistors and current limiting resistors connected between the emitters of the transistors and the positive and negative voltage supplies. These resistors adjust the current through the transistors and prevent them from overloading.
When the BJT array is activated, voltage is applied to the base of the BJT transistors. This causes the current to flow between the emitter and the collector. The current passes through the collector load, which is connected in series with the current limiting resistors. The voltage across the current limiting resistors is proportional to the current flow, which is then applied to the output terminals of the device.
The RN2971 (TE85L,F) has many advantages over other types of BJTs, such as low power consumption, high speed, and high cost efficiency. It is also suitable for low voltage and current applications, making it perfect for use in a variety of applications.
Conclusion
In conclusion, the RN2971 (TE85L,F) is a low power, high speed BJT array that is pre-biased and can provide an in-line complementary output signal. It is suitable for use in bipolar driver circuits, DC control circuits, hammer drivers, lamp drivers, power supply relays, inverting amplifiers, voltage regulators, and general purpose amplifiers. The low power consumption, high speed, and high cost efficiency make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RN2905T5LFT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2906FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2911FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2901FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2965(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2963(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2962(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2964(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W U... |
RN2961(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2905FE,LF(CB | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2902FE,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W E... |
RN2903,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2904,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2902FE(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2904FE(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2961FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2962FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2963FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2964FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2965FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2966FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2967FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2968FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2969FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2970FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
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