RN2910(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN2910(T5LFT)TR-ND

Manufacturer Part#:

RN2910(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2910(T5L,F,T) datasheetRN2910(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RN2910 (T5L, F, T) is a type of pre-biased bipolar transistor array. It consists of five NPN or PNP transistors connected in a Darlington configuration. The device is suitable for applications from 10 to 40 volts, making it ideal for many high-voltage industrial and consumer applications. The RN2910 is designed for an input of 5, 10, or 25 volts and has protection against reverse polarity and over-voltage.

The RN2910 is a multi-input device that can be configured to operate in either a common-emitter or common-base configuration. In a common-emitter configuration, the RN2910 requires a minimum of three input signals to operate, while in a common-base configuration only two input signals are required. The design allows the device to operate over a wide range of current and voltage levels, making it suitable for a wide range of applications.

At the heart of the RN2910 is the Darlington Configuration which allows the device to provide high current gains while maintaining low power losses. This configuration consists of two transistors connected in series, with one of the transistors providing the base current for both transistors. This arrangement allows the first transistor to conduct current until it reaches its \'saturation\' point, at which point the second transistor begins to conduct the remaining current. This arrangement allows the RN2910 to provide high current gains and low power losses when compared to single transistors.

The RN2910 has a maximum input power of 5 watts and can handle up to a 100mA of current. Moreover, due to its wide input range, the device can be operated in either a high current gain or low current gain mode. The device also has a high tolerance level, allowing it to withstand transients and surges, making it suitable for applications in noisy environments. With these features, the RN2910 is a great choice for many high-voltage industrial and consumer applications.

In conclusion, the RN2910 is a pre-biased bipolar transistor array and it is designed for an input of 5, 10, or 25 volts. It consists of five NPN or PNP transistors connected in a Darlington configuration and is capable of providing high current gains while maintaining low power losses. The device can be operated in either a high current gain or low current gain mode and is suitable for applications over a wide range of current and voltage levels. Moreover, it has protection against reverse polarity and over-voltage and its wide input range makes it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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