
Allicdata Part #: | RSS050P03FU6TB-ND |
Manufacturer Part#: |
RSS050P03FU6TB |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 5A 8SOIC |
More Detail: | P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.40000 |
10 +: | $ 0.38800 |
100 +: | $ 0.38000 |
1000 +: | $ 0.37200 |
10000 +: | $ 0.36000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RSS050P03FU6TB is a FET, or field effect transistor, which falls within the variant of the device known as a MOSFET, or metal oxide semiconductor FET. It is a type of single transistor with a variety of applications in fields such as communications and automotive electronics. This article will discuss the application field and working principle of the RSS050P03FU6TB.
When used in communications and automotive electronics, the RSS050P03FU6TB is primarily used as an amplifier for signals. This function is achieved by allowing an input signal to control the output of a high power device. For example, the RSS050P03FU6TB can be used to amplify a voltage or current signal from a low input level to a higher output level. In this way, it enables signals to be transmitted or received over greater distances.
The RSS050P03FU6TB works in one of two main modes, the enhancement mode and the depletion mode. In the enhancement mode, the source, gate and drain of the RSS050P03FU6TB are all connected to an external electric supply and when a voltage is applied to the gate, current flows from the source to the drain. In the depletion mode, the transistor is also in an externally powered state, however, current flows from the drain to the source when a voltage is applied to the gate.
The RSS050P03FU6TB also features non-linear characteristics, which allows it to be used in various power supply applications. For example, it can be used as a voltage regulator for a range of devices where the voltage and current can be adjusted precisely over a wide range. It can also be used as a fast-switching switch for AC and DC power applications, allowing devices to be switched quickly from one state to another.
Furthermore, the RSS050P03FU6TB has a low threshold voltage, which means that it can be operated at low power levels and with low gate capacitance. This makes it an ideal choice for use in high speed circuits, as the device can handle large currents without creating excessive heat.
Finally, the RSS050P03FU6TB is a MOSFET transistor and is capable of providing up to 35 Watts of power on the active region. This makes it an excellent option for power circuits, where the device can be used to control the power flow from one component to another.
In conclusion, the RSS050P03FU6TB is a single, MOSFET transistor with a range of applications in communications and automotive electronics. It can be used for amplifying voltage and current signals, for adjusting voltage and current levels precisely over a wide range, for fast switching of AC and DC power, and for controlling the power flow between different components. It also features a low threshold voltage, allowing it to be used in high speed circuits, and is capable of providing up to 35 Watts of power.
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