Allicdata Part #: | RSS065N03FU6TB-ND |
Manufacturer Part#: |
RSS065N03FU6TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 6.5A 8SOIC |
More Detail: | N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO... |
DataSheet: | RSS065N03FU6TB Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RSS065N03FU6TB is a trench MOSFET that offers excellent performance characteristics for a wide variety of applications. It features a low on-resistance of 0.65 mΩ, a low gate charge of 222nC, a low gate-source threshold voltage of 1.0V, and an breakdown voltage of 650V. The device is housed in a SMPS-optimized 8-pin TO-220 package, making it well-suited for use in high-efficiency, low-profile systems. Benefiting from its unique structure, the RSS065N03FU6TB is ideal for applications such as high-temperature and high-voltage switched mode power supplies (SMPSs), high-speed motor drives and photovoltaic (PV) inverters. Additionally, its robust design allows it to excel in automotive and industrial models, as well as other harsh environments. The RSS065N03FU6TB belongs to a class of transistors called field-effect transistors (FETs). FETs are unipolar devices that control the electric current flow between two terminals known as the source and drain. They employ a voltage-controlled field that modulates their current output.The RSS065N03FU6TB is a type of FET known as a Metal-Oxide-Semiconductor FET (MOSFET). Like many other FETs, MOSFETs are insulated gate devices that leverage a gate oxide to modulate the current flow through the channel between the source and drain. What makes MOSFETs unique is their use of two gates: a control gate and a body gate. The control gate modulates the electric field between the source and conductor to control current flow in the channel. The body gate, or substrate gate, sets the operating threshold voltage of the transistor. The RSS065N03FU6TB is also a trench MOSFET. Trench MOSFETs are special type of MOSFETs that feature a highly optimized geometry. This geometry—which comprises of multiple adjacent deep-trench structures— offers a number of benefits over other MOSFETs, including a low on-state resistance and improved switching speed.Due to its low gate-source threshold voltage, low on-resistance, and high breakdown voltage, the RSS065N03FU6TB is ideally suited for high and medium frequency applications. In addition to its main application areas, such as SMPSs, motor drives, and PV inverters, it can also be used for speed control in various applications such as pumps, DC/DC converters, industrial machines and other power supplies. Overall, the RSS065N03FU6TB is a powerful and reliable device that can be used in a wide variety of applications. It offers excellent switching speed and low on-state resistance, making it well-suited for complex power systems. Additionally, its robust design makes it ideal for use in harsh environments. Thanks to its low cost, the RSS065N03FU6TB is a great choice for cost-sensitive projects.
The specific data is subject to PDF, and the above content is for reference
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