Allicdata Part #: | RSS090N03FU6TBTR-ND |
Manufacturer Part#: |
RSS090N03FU6TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 9A 8-SOIC |
More Detail: | N-Channel 30V 9A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | RSS090N03FU6TB Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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RSS090N03FU6TB is a type of field-effect transistor (FET), specifically single metal-oxide semiconductor field-effect transistor (MOSFET). It has three terminal connections: gate, drain and source. These connections are represented as G, D, and S respectively. FETs are a type of transistor which are widely used in modern circuits, primarily due to their ability to generate high current at low levels of power dissipation.
The RSS090N03FU6TB MOSFET is designed for high-performance applications and is a popular choice among engineers due to its exceptional characteristics. The device can operate at high temperatures and withstand an applied voltage up to 100V, providing greater flexibility and resistivity than other types of FETs. It is also able to switch at high frequencies and offers low-level input current, meaning it is more resistant to noise interference from other components in the circuit.
The RSS090N03FU6TB MOSFET has a number of practical applications. It is well suited to radio frequency power amplification in applications such as short-wave radios, wireless transmitters and medium power amplifiers. Additionally, it is widely used in the output stages of audio amplifiers, which demand high-current conduction with low switching losses and low distortion. It is also a useful device for high-voltage switching power supplies and modulating circuits.
The working principle of the RSS090N03FU6TB MOSFET is based on the basic principles established by semiconductor thermodynamics. In short, when voltage is applied to the gate terminal of the transistor, it creates an electric field which attracts mobile electrons from the n-type material to the gate electrode. This creates a conductive channel between source and drain and allows current to flow. The width of this channel is dependent upon the amount of voltage applied to the gate terminal, which can be used to control the current flowing through the transistor in a linear fashion.
The RSS090N03FU6TB MOSFET is an effective and versatile device with a wide range of applications in electronic circuits. It is capable of operating at high temperatures and offers good performance even in hostile environments. Furthermore, it is easy to implement and the device provides reliable, reproducible results. As such, the RSS090N03FU6TB MOSFET is an important component in many modern electronics applications.
The specific data is subject to PDF, and the above content is for reference
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