RSS090P03TB Allicdata Electronics
Allicdata Part #:

RSS090P03TBTR-ND

Manufacturer Part#:

RSS090P03TB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 9A 8-SOIC
More Detail: P-Channel 30V 9A (Ta) 2W (Ta) Surface Mount 8-SOP
DataSheet: RSS090P03TB datasheetRSS090P03TB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Vgs (Max): 20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RSS090P03TB is a single N channel junction gate field-effect transistor (JFET) with an integrated gate protection zener for enhanced protection of circuit switches. This device is commonly used in telecommunications, industrial, HVAC, automotive and consumer electronics applications. This article will provide a brief overview of the application field and working principle of the RSS090P03TB device.

The RSS090P03TB is a N Channel JFET device with an integrated gate protection zener. It is suitable for high-voltage switching applications, high-side switch control, level shifting and voltage clamping. The device has a Vgs(th) of -2.8V and an on resistance of 0.30Ohm. The P-Drain GND connection is on the top of the device, with the source being connected to the bottom. This device can handle a maximum drain current of 90A and a maximum dissipation of 6W.

The working principle of the RSS090P03TB is based on the electrical properties of a JFET. A JFET has three terminals: the source, the gate and the drain. The source and drain are connected to the p-type semiconductor material and the gate is connected to the n-type semiconductor. A voltage applied to the gate causes a depletion of electrons in the region between the source and drain. The depletion of electrons results in a decrease in the current flowing between the source and drain and this is known as the pinch-off region. The pinch-off voltage is the voltage applied to the gate that results in the pinch-off region.

The RSS090P03TB device has an integrated gate protection zener to improve protection of the circuit switch. This zener provides protection for the gate by dissipating excessive voltage. The zener also helps to limit the maximum voltage. This protects the gate from being damaged by high voltages, which can occur during switching operations.

The RSS090P03TB device is commonly used in many different applications. It can be used in telecommunications applications to switch high power signals. It can be used in industrial applications to control electric motors and other heavy machinery. It can be used in HVAC applications to control relays, valves and electric fans. It can be used in automotive applications to switch between two power sources, such as electric and internal combustion engines. It can also be used in consumer electronics applications to control the power output of TVs, stereos and other audio or video equipment.

To summarize, the RSS090P03TB is a single N Channel JFET device with an integrated gate protection zener. It is commonly used in telecommunications, industrial, HVAC, automotive and consumer electronics applications. Its integrated zener provides enhanced protection for the circuit switch, allowing for a maximum voltage and power to be handled safely. The working principle of the device is based on the electrical properties of a JFET, with a voltage applied to the gate resulting in a depletion of electrons in the source to drain region.

The specific data is subject to PDF, and the above content is for reference

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