Allicdata Part #: | RSS070P05FRATBTR-ND |
Manufacturer Part#: |
RSS070P05FRATB |
Price: | $ 0.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 4V DRIVE PCH MOSFET (CORRESPONDS |
More Detail: | P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | RSS070P05FRATB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.74040 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 45V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 47.6nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RSS070P05FRATB is, in the field of semiconductors, a power MOSFET. It is a N-channel enhancement mode MOSFET, which means it uses a voltage given to a gate connection to enable the MOSFET when the gate voltage is higher than the threshold voltage. Additionally, it is considered a single, unipolar transistor, meaning it can facilitate current flow in one direction while inhibiting it in the opposite direction without utilizing two connections and instead only using one.
When applied and used correctly, the RSS070P05FRATB can be a very efficient and effective device for accomplishing a variety of tasks. For example, it can be used to switch a variety of power supplies and DC motors, making these items many times more efficient and reliable. Furthermore, it can be used in power converters and the like, where it can provide the necessary protections and verify that the power that is being provided is the right kind.
The RSS070P05FRATB operates on the principle that when an electric field is applied across a dielectric, an electric charge will be attracted across it. This is the same concept that is used in a capacitor, but here the semiconductor device uses the same principles to switch the drain and source of the current when it reaches a certain voltage. This is because when the voltage is passed through the gate connection, it causes a high electric field to be created between the drain and source. This electric field allows for the current to flow between the drain and source, effectively switching the current flow.
The semiconductor also utilizes a special type of dielectric which is made of a highly conductive material, which means that the electric fields created by the gate can effectively control the flow of electricity between the drain and source. Furthermore, the dielectric material allows for the device to be more efficient than other types of field effect transistors, as the electric fields created can be kept to a minimum, meaning more efficient switching. As a result, the RSS070P05FRATB is capable of providing more efficient and reliable performance.
Because of the incredible efficiency and capabilities the RSS070P05FRATB offers, it has become a popular choice for many different applications. It can be used in power supplies, DC motors, power converters, and other power-sensitive components. It can also be used in low voltage and low frequency applications, such as in low voltage lighting, as well as in automotive, aerospace and medical applications due to its higher level of reliability.
Overall, the RSS070P05FRATB is one of the most effective and efficient MOSFETs on the market today. It is the perfect choice for any application that requires a reliable and efficient power delivery, low voltage or low frequency operation, or protection from overvoltage and short-circuit damage. Additionally, its unipolar single transistor design makes it an ideal choice for many situations, as it is able to facilitate current flow in one direction while inhibiting it in the opposite direction.
The specific data is subject to PDF, and the above content is for reference
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