RSS065N03TB Discrete Semiconductor Products

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RSS065N03TB is a type of single depletion-mode N-Channel MOSFET, commonly used in a variety of applications.

Description

RSS065N03TB consists of a single N-Channel MOSFET with a drain-to-source voltage of 65V, a drain current of 9.5A and an on-state resistance of 1.03Ω. It is an N-channel depletion-mode MOSFET, which features low on-resistance and good linearity. Its high switching speed and low RDS(ON) makes it suitable for high frequency applications, while its gate-source breakdown voltage of 8V makes it suitable for low voltage operations.

Features and Benefits

• High drain-source voltage: 65V, which makes it suitable for high voltage applications
• Low RDS(ON): 1.03Ω, which improves the efficiency and reliability of the MOSFET
• High switching speed, making it suitable for high switching frequency applications
• Low gate-source breakdown voltage: 8V, which makes it suitable for low voltage operations
• Good linearity, which enables the MOSFET to be used for linear operations

Applications

RSS065N03TB is a single depletion-mode N-channel MOSFET, which can be used in the following applications:

• DC-DC converter circuits: RSS065N03TB can be used in DC-DC converter circuits, such as buck converters and flyback converters, as switching element.
• Switched-mode power supplies (SMPS): RSS065N03TB can be used in switching-mode power supplies, such as boost and buck-boost converters, as the switch element.
• DC motor driver circuits: RSS065N03TB can be used in DC motor drivers as the power switch.
• MOSFET drivers: RSS065N03TB can be used as the output element for MOSFET drivers.
• Switching relays: RSS065N03TB can be used as the switch element for switching relays.
• Linear regulators: RSS065N03TB can be used as the switch element for linear regulators.

Working Principle

RSS065N03TB is a type of depletion-mode N-channel MOSFET. When a depletion-mode MOSFET is in the off-state, its drain-to-source voltage (Vds) is greater than 0V, and its drain current (Id) is 0A. When a gate voltage (Vgs) is applied to the MOSFET, the MOSFET begins to conduct and the drain current starts to flow. The amount of current that flows through the MOSFET is determined by its gate-source voltage (Vgs). The higher the Vgs, the more current that flows through the MOSFET, which increases its on-state resistance (RDS(ON)). The maximum drain current that can flow through the MOSFET is determined by its drain-to-source voltage (Vds).

Conclusion

RSS065N03TB is a single depletion-mode N-channel MOSFET, which features high drain-source voltage, low RDS(ON) and high switching speed. It is suitable for use in a variety of applications, such as DC-DC converter circuits, SMPS, DC motor drivers, MOSFET drivers, switching relays and linear regulators. Its working principle is based on the fact that the amount of current that flows through the MOSFET is determined by its gate-source voltage and is limited by its drain-to-source voltage.

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