RSS070N05FU6TB Discrete Semiconductor Products

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The RSS070N05FU6TB is a silicon superjunction power MOSFET. It is a depletion mode Mosfet and one of the latest products from Renesas Electronics. The device is a type of Field-effect transistor, made from silicon and designed for use in high power switching, amplifying and for controlling applications. The RSS070N05FU6TB device offers higher current-handling capability and a more robust package design compared to other silicon superjunction MOSFETs.

Application Field

The RSS070N05FU6TB is suitable for a variety of switching applications, such as AC/DC switching power supplies, DC/DC converters, light dimming, automotive applications, battery management systems and many other high current applications. With the right external components and proper design, the device can switch efficiently at high frequency without issues of EMI and temperature rise. Furthermore, the device consumes very little power which reduces the need for a heatsink.

Working Principle

The RSS070N05FU6TB is a Depletion mode MOSFET. When the gate voltage is negative, the MOSFET is “on”, allowing current to flow through source-drain. The gate voltage is negative because the P-type substrate material is doped with an n-type dopant, creating a conductive channel between source and drain. The voltage applied to the gate controls the width of this conductive channel, thus controlling the current passing through the MOSFET. Increasing the gate voltage reduces the channel width, which decreases the current flow, turning off the MOSFET. By applying the right gate voltage, it is possible to switch the device on or off and thus control an external circuit.

Conclusion

The RSS070N05FU6TB device from Renesas Electronics is a silicon superjunction power MOSFET designed for use in high power switching, amplifying and controlling applications. It offers higher current-handling capability and a more robust package design than other silicon superjunction MOSFETs, making it suitable for many applications. The device is a depletion mode MOSFET and operates by applying a negative gate voltage to control the width of the conductive channel. This allows for efficient control over the current passing through the device and allows for external circuits to be switched on or off.

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