RSS075P03FU6TB

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	21 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 10V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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Introduction

The RSS075P03FU6TB is a FET-type transistor, which stands for Field Effect Transistor. It is a single MOSFET, which acronym is derived from metal-oxide-semiconductor field-effect transistor. This type of transistor is different from a bipolar junction transistor, which works by using the movement of electrons as an on/off switch. Instead, the field effect transistor uses a semiconductor channel through which electrical current is regulated by the voltage on its gate. This makes it easier to amplify small signals, something that is essential in today\'s technology.

Application Field

The RSS075P03FU6TB has a wide number of applications, including power conversion and regulation, RF/microwave amplification, current sensing, and high-speed digital logic/timing control. It is particularly well-suited for power conversion or voltage regulation details, where its low on-resistance and rugged VGS threshold gives enhanced performance. This makes it ideal for applications like LED lighting and motor control, where precise voltage and current control is necessary.

Working Principle

The RSS075P03FU6TB works by using the electric field created by a voltage applied to the gate of the transistor. When a voltage is applied to the transistor\'s gate, it creates an electric field that changes the conductivity of the channel between the drain and source. This change in conductivity allows for the flow of current through the transistor to be controlled, amplified and/or tweaked according to the conditions of the voltage applied.The RSS075P03FU6TB is a n-channel MOSFET, which means the current falls through the transistor when the voltage applied to the gate is above the threshold voltage. This makes the RSS075P03FU6TB suitable for applications like power amplifiers, switch mode power supply, and high-side switching.

Conclusion

The RSS075P03FU6TB is a single MOSFET transistor which is ideal for a large range of applications such as power conversion, RF/microwave amplification, current sensing, and digital logic/timing control. It is a n-channel MOSFET, meaning that current flows through the transistor when the voltage applied to the gate is above its threshold. The performance and efficiency provided by the RSS075P03FU6TB makes it suitable for applications that require precise voltage and current control, such as LED lighting and motor control.

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