Allicdata Part #: | RSS050P03TBTR-ND |
Manufacturer Part#: |
RSS050P03TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 5A 8-SOIC |
More Detail: | P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | RSS050P03TB Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RSS050P03TB is a Silicon Epitaxial field-effect transistor that is used in a variety of different application fields. This N-channel MOSFET is comprised of an NFET (metal oxide semiconductor field-effect transistor) integrated within a single monolithic device, enabling current conduction in only one direction. Its power limit is 50W with maximum drain-to-source voltage (VDS) of 50V, drain current (ID) of 5A, and on-resistance (RDS) of only 0.005 ohms. In addition, its maximum junction temperature is 175°C and features excellent thermal stability and noise suppression.
The RSS050P03TB is ideally used in various makes and models of consumer electronics, including but not limited to power switches and relays, motor control switches, and consumer-grade displays. In particular, its compact design and low RDS value make it a great choice for powering microprocessors, FPGAs, and other components. It also features a variety of useful features such as an ultra-low gate charge, fast switching speeds, high-temperature operation, and superior thermal dissipation.
The working principle of the RSS050P03TB is as follows. The device consists of a Gate, Source, and Drain. When the Gate is connected to a positive voltage, the Gate-Source voltage (VGS) will increase to its threshold voltage (Vth) at which point electrons begin to flow between the Source and Drain. This flow of electrons is referred to as the "on-state" of the device. Once the electrons reach their maximum flow, the device is considered to be in the "saturation region". When the Gate voltage is returned back to zero, the on-state of the device ends, thereby ending the electron flow as well. This is referred to as the "off-state" of the device.
In addition to its aforementioned features, the RSS050P03TB also features a wide range of safety features. It is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain certain hazardous substances that can be harmful to the environment. It is also UL (Underwriters Laboratories) listed, meaning it has been stringently tested and meets set safety standards. Additionally, it features excellent protection from short-circuiting, overloads, and electrostatic discharges.
The RSS050P03TB is a great choice for powering a variety of electronic items and devices due to its excellent performance and safety features. Its ultra-low RDS value ensures fast and efficient switching speeds, while its robust construction ensures reliable operation. Furthermore, its wide range of safety features make it a great choice for powering higher-end items and components. In conclusion, the RSS050P03TB is an outstanding choice for any application that requires an N-Channel MOSFET.
The specific data is subject to PDF, and the above content is for reference
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