
RSS070P05FU6TB Discrete Semiconductor Products |
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Allicdata Part #: | RSS070P05FU6TBTR-ND |
Manufacturer Part#: |
RSS070P05FU6TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 45V 7A 8-SOIC |
More Detail: | P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47.6nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 45V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RSS070P05FU6TB is a single N-channel Enhancement Mode Field Effect Transistor (MOSFET). It is designed for high efficiency, high speed power switching applications. This device has a breakdown voltage of 70V and an on-state resistance of 8mΩ. The device is also highly efficient, featuring high-frequency, low-inductance packaging that enables excellent switching performance.
The application field of the RSS070P05FU6TB transistor is primarily that of high efficiency and high speed switching in a wide range of industrial and automotive applications. The low on-state resistance and relatively low gate-source threshold voltage makes it particularly suitable for high efficiency switching, such as DC/DC converters, motor control, power management, and power switching. Its low gate-source capacitance and input capacitance also makes it suitable for high speed digital logic applications.
The working principle of the RSS070P05FU6TB is deceptively simple. It is a voltage-controlled device, meaning that an applied voltage between the gate and source terminals will control the conduction of electrons across the channel. The application of a positive voltage to the gate increases the current through the channel, and a negative voltage decreases it. The RSS070P05FU6TB can be used to regulate current in a variety of ways, such as a switch, a driver, or a linear regulator.
When the RSS070P05FU6TB is used as a switch, it is referred to as a "depletion mode" switch. In this application, a gate voltage is applied to the device and a voltage differential is then established between the drain and the source terminals. When the gate voltage is high enough, current will flow between the source and the drain. When the gate voltage is reduced, the current stops flowing.
When the RSS070P05FU6TB is used as a driver, it is referred to as an "enhancement mode" driver. In this application, a gate voltage is applied to the device and an external resistor is connected between the source and the drain. This creates a voltage differential between the source and the drain. When the gate voltage is increased, the current increases, allowing for the driving of a load. When the gate voltage is reduced, the current stops.
When the RSS070P05FU6TB is used as a linear regulator, the device senses the current flowing through the device and regulates it. This allows the device to be used to regulate the current, voltage, and power delivery of an appliance or circuit. This can be done in either a closed loop or open loop configuration.
The RSS070P05FU6TB is an extremely versatile device and is capable of providing many benefits to its applications. Its low voltage, high efficiency, and low power dissipation make it suitable for a wide variety of applications. The device is also inherently stable, does not require additional components, and is tolerant to transient power fluctuations. The device is also simple to use and can be used in a variety of scenarios.
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