RSS075P03TB Allicdata Electronics

RSS075P03TB Discrete Semiconductor Products

Allicdata Part #:

RSS075P03TBTR-ND

Manufacturer Part#:

RSS075P03TB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 7.5A 8-SOIC
More Detail: P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount 8-SO...
DataSheet: RSS075P03TB datasheetRSS075P03TB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RSS075P03TB is a type of P-channel depletion-mode power MOSFET (metal oxide semiconductor field-effect transistor) manufactured by ON Semiconductor. This device is designed for use in low voltage applications like automotive, telecom, and consumer electronics. This article will discuss the application field and working principle of RSS075P03TB.

The RSS075P03TB has a drain to source breakdown voltage of -75 V and an on-state resistance of 0.075 ohms. It has a continuous drain current of -187 A and pulse width of up to 3.5 s. This MOSFET has a gate charge of 75 nC and a gate threshold voltage of 3.5 V. The thermal resistance junction-to-ambient is 160 degrees Celsius per watt.

RSS075P03TB is used in low voltage applications where low RDS(on) and a high current capability are required. It can be used to regulate current in power supply, motor control, LED lighting, and audio amplifiers. This MOSFET is suitable for applications where high operating temperatures and high switching frequencies are required. It can also be used in battery management systems, solar inverters, and high voltage switching applications.

The RSS075P03TB is a depletion-mode power MOSFET. This means that the device is turned on when the gate to source voltage is at or below the threshold voltage. When the gate source voltage is at or above the threshold voltage, the device is turned off. To turn on the device, the gate voltage must be equal to the source voltage. This allows the device\'s source and drain regions to be in effect, allowing current to flow from the drain to the source. To turn off the device, the gate voltage must be at least above the threshold voltage in order for the device to be in cutoff.

In order for the RSS075P03TB to operate correctly, a heatsink must be used to ensure it doesn\'t overheat during operation. The device should also be properly mounted onto a circuit board in order to ensure good thermal conduction and to avoid any potential short circuits.

The RSS075P03TB is an excellent choice for applications that require low RDS(on), high current capability, and high switching frequencies. Its depletion mode operation makes it easy to control, allowing users to turn on or off multiple devices quickly and easily. Its low cost and wide range of applications make it an attractive option for many users.

The specific data is subject to PDF, and the above content is for reference

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