RSS095N05FU6TB Discrete Semiconductor Products |
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Allicdata Part #: | RSS095N05FU6TBTR-ND |
Manufacturer Part#: |
RSS095N05FU6TB |
Price: | $ 0.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 45V 9.5A 8-SOIC |
More Detail: | N-Channel 45V 9.5A (Ta) 2W (Ta) Surface Mount 8-SO... |
DataSheet: | RSS095N05FU6TB Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.55555 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 10V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 26.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 45V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RSS095N05FU6TB is a high performance, single-channel MOSFET with low on-resistance, low threshold, and expanded UVLO protection. It is manufactured using the latest Silicon-On-Insulator (SOI) process technology and is fully qualified with the AEC-Q101 standard.
The RSS095N05FU6TB is designed for use in high-current applications such as automotive switchmode power supplies, power inverters, and battery chargers. It features a low on-resistance of 1.5Ω maximum, low gate threshold voltage of 1.5V maximum, and a wide operating temperature range from -40°C to 175°C for reliable operation in a wide variety of applications. This MOSFET also features low switching losses and low noise operation, making it ideal for use in high-frequency switchmode power supplies and motor controls.
The RSS095N05FU6TB is an insulated-gate bipolar transistor (IGBT) that is used to control the current and voltage of a circuit or system. It is an electronic semiconductor devices with three terminals that controls the flow of current between two other terminals when a voltage is applied to the gate terminal (G). Its main distinguishing feature is its low resistance between the Drain and Source terminals when the gate is biased, making it an ideal choice for applications requiring high current switch control.
The working principle of the RSS095N05FU6TB is based on the modification of FET semiconductor mechanisms. It is a voltage-controlled device where the conductive channel between the source and drain is controlled by the voltage applied to the gate. When the voltage between the Drain and Source is shifted by a small amount, the current flowing between them is greatly changed.
The RSS095N05FU6TB is well-suited to applications requiring high current switching such as automotive switchmode power supplies and power inverters, as well as DC/DC converters and motor controls. Compared to other bi-directional MOSFETs, the RSS095N05FU6TB offers greater current handling capabilities, reduced switching times, and improved efficiency.
In summary, the RSS095N05FU6TB is a high performance, single-channel MOSFET with low on-resistance, low threshold, and expanded UVLO protection. It is well-suited to applications requiring high current switching and offers greater current handling capabilities, reduced switching times, and improved efficiency. It is manufactured using the latest Silicon-On-Insulator (SOI) process technology and is fully qualified with the AEC-Q101 standard to ensure reliable operation in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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