SI1023CX-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI1023CX-T1-GE3 is a power metal oxide semiconductor field effect transistor (MOSFET) array. It is a three-phase synchronous rectifier driver, designed to reduce power losses in automotive powertrain system applications. It is manufactured using advanced silicon-on-insulator (SOI) technology, resulting in a low threshold voltage, low Rds(on) and excellent thermal performance.

The SI1023CX-T1-GE3 MOSFET array consists of six N-channel power MOSFETs with integrated protection features. It has a built-in over-temperature protection stage that activates the MOSFET’s body diode if the die temperature is too high. This reduces power losses and ensures the reliability of the powertrain system. Additionally, the SI1023CX-T1-GE3 has an over-voltage protection stage that shuts down the MOSFET when the voltage is too high. This also helps to reduce power losses and extend the life of the powertrain system.

The operating principle of the SI1023CX-T1-GE3 is based on its switching behavior. When the positive gate-source voltage is applied, the N-channel MOSFETs will be on and the current will flow from the source to the drain. This will then induce a voltage drop across the MOSFET, effectively dropping the voltage that is being applied to the load. By controlling the voltage at the drain, an effective way to regulate and vary the current is created.

The SI1023CX-T1-GE3 is suitable for use in automotive powertrain systems to help reduce power losses and improve efficiency. In these systems, it can be used to drive the three-phase synchronous rectifier, providing the control for the power stage of the powertrain system. For example, it can be used to regulate the voltage applied to the three-phase motor that is being used to power the vehicle. It can also be used as part of the power stage to reduce the amount of power being wasted while the system is in idle mode.

In other applications, this device can be used to drive the three-phase brushless direct current (BLDC) motor that is used to power consumer electronics and other high-performance applications. It can also be used to provide the gate control of the horizontal output transistors (HOTs) that are used in power-factor corrected power supplies in consumer and industrial applications. Additionally, due to its advanced SOI technology, it can also be used as part of a high-frequency power switch.

The SI1023CX-T1-GE3 is a power MOSFET array that is designed to reduce power losses in automotive powertrain and other applications. It consists of six N-channel MOSFETs with integrated protection features and advanced SOI technology that helps to increase its efficiency and reduce power losses. Its operating principle is based on the conductive behavior of the MOSFETs, which, when activated, will effectively reduce the voltage applied to the load and thereby increase the system\'s overall efficiency. The SI1023CX-T1-GE3 is suitable for use in a variety of applications, including automotive powertrain systems, consumer and industrial power supplies, and high-frequency power switching.

The specific data is subject to PDF, and the above content is for reference