SI1072X-T1-GE3

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The SI1072X-T1-GE3 is a single N-Channel, enhancement mode MOSFET. It offers a low RDS(on), low input capacitance and fast switching capability. Typical applications for this type of MOSFET include high-side and low-side switches, H-bridge motor drivers, DC/DC converters and sensor interfaces. The SI1072X-T1-GE3 is also suitable for use in conjunction with logic circuits, as the gate voltage inputs are logic compatible.

The SI1072X-T1-GE3 is a voltage-controlled device, meaning that its output current flow is determined by the gate-source voltage (VGS). The higher the VGS, the more current the device can pass through it. The device is an enhancement mode device, meaning that a small positive voltage must be applied to the gate terminal to turn the device on. The gate threshold voltage (VGS(th)) is typically 2.5V.

The SI1072X-T1-GE3 is capable of handling high currents, up to 30A with no problems. Its maximum output impedance is 11mOhms (RDS(on)), which means it can provide relatively low power losses. Moreover, it has a low input capacitance, making it ideal for use in high-frequency applications.

In order to make the highest possible power efficiency in switching applications, the body diode of the device should be taken into account. The SI1072X-T1-GE3 has an Avalanche energy rating of 300mJ, making it suitable for use in medical and industrial applications.

The SI1072X-T1-GE3 comes in the TO-220AB package. The package has a thick copper clip which makes it ideal for use in power applications. The device is also capable of withstanding a maximum reverse drain-source voltage of 30V.

In summary, the SI1072X-T1-GE3 is an ideal choice for a variety of high-side and low-side switching, H-bridge motor driver, DC/DC converter and sensor interface applications. It has a low on-resistance and fast switching capabilities, making it ideal for high frequency applications. Its Avalanche energy rating and TO-220AB package make it suitable for use in medical and industrial applications.

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