Allicdata Part #: | SI1058X-T1-GE3-ND |
Manufacturer Part#: |
SI1058X-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V SC89 |
More Detail: | N-Channel 20V 236mW (Ta) Surface Mount SC-89-6 |
DataSheet: | SI1058X-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 91 mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.9nC @ 5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 236mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI1058X-T1-GE3 belongs to the family of field effect transistors (FETs). FETs are active elements made on a semi-conductor substrate. Specifically, SI1058X-T1-GE3 is a single MOSFET transistor. It can be used for multiple applications in power switching, so applications demanding high-speed, low-power loss, low-noise switching can be powered by these devices.
In order to understand its working principle, let us take a look at its physical characteristics. The transistor comes in a three-terminal package – the source (S), the gate (G) and the drain (D). The S and D terminals form a direct electrical contact with the semiconductor material which forms the structure of the transistor. These two terminals act as the input/output of the chip and are responsible for the actual switching of the power. The G terminal is insulated from the semiconductor so it does not come into direct contact. However, it is used to control the switching characteristics of the device.
In simpler terms, the transistor works by the action of an electrical field created by a voltage applied to the gate terminal. The applied field causes the current flowing from the source to the drain to be controlled by the voltage applied to the gate. By changing the applied gate voltage, the current flowing through the drain-source circuit can be accurately regulated. This is known as FET switching.
In terms of its application field, the SI1058X-T1-GE3 can be used for switching small charges between circuits. The transistor can handle up to 10 amps of peak current and is designed to operate at 2.5V. It can be used in motor control and other applications with high-speed and low-power demand, as well as in automotive, industrial control, digital and computer applications. The transistor is also suitable for driving inductive and digital loads.
The SI1058X-T1-GE3 offers many advantages over other transistors. It has an exceptionally low on-resistance and a fast switching speed, which makes it perfect for precision switching and power conversion applications. The device also offers high levels of reliability and durability, making it a great choice for applications that require long-term reliability. Additionally, it has low distortion figures, which help reduce any unwanted signals.
By understanding the working principle and application fields of the SI1058X-T1-GE3, one can easily integrate the device into a variety of different applications. Its advantages in terms of performance and reliability make it an ideal choice for low-power applications demanding precise, high-speed switching. As such, the SI1058X-T1-GE3 is a great choice for those seeking reliable, high-performance switching solutions.
The specific data is subject to PDF, and the above content is for reference
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