SI1039X-T1-GE3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	870mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	165 mOhm @ 870mA, 4.5V
Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Vgs (Max):	±8V
FET Feature:	--
Power Dissipation (Max):	170mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-89-6
Package / Case:	SOT-563, SOT-666

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<div><h1></h1><p>SI1039X-T1-GE3 is an advanced and enhanced version of the standard silicon field effect transistor (FET) or metal oxide semiconductor FET (MOSFET). It is considered as a single and compact electronic device, which is also referred to as a “Smart FET”. It is a semiconductor device with three terminals, that is, source, gate and drain.</p><p>The SI1039X-T1-GE3 has great advantages over typical FETs. It has a very strong power rating, meaning that it can handle higher levels of current driven by the gate. The gate-drain capacitance of this device is significantly lower than that of other FETs, so it can handle higher frequencies. Additionally, it has improved immunity to electrostatic discharge (ESD) and other short-term transients that may occur due to high voltages or currents.</p><p>The most common application for the SI1039X-T1-GE3 is in power electronics systems. This device is often used as a voltage switch to control the power flow from a power source to the load. It is also used as a variable resistance to reduce the magnitude of the voltage across a given load. It is often used in high-power switching applications, such as in variable speed motor controllers.</p><p>The working principle of the SI1039X-T1-GE3 is based on the principle of electron tunneling. In short, the device operates by creating a conductive pathway between the gate and the drain. When the voltage applied to the gate is increased, electrons will tunnel through a thin barrier created by the gate electrode, creating a channel in the gate oxide. This increased current increases the gate-drain capacitance, which reduces the voltage across the device and thereby providing power to the load.</p><p>In addition to its uses in power electronics systems, the SI1039X-T1-GE3 is also used in communication systems. It can be used as a variable gain amplifier to boost the power of a signal. It can also be used as an attenuator to reduce the output of a signal. It is also used in sensing applications, such as temperature sensors and proximity detectors.</p><p>The SI1039X-T1-GE3 is an advanced and enhanced version of the standard FET or MOSFET. It has great advantages over typical FETs, such as a higher power rating and lower gate-drain capacitance. It is often used in power electronics systems as a voltage switch or variable resistance, or in communication systems as a variable gain amplifier or attenuator. Its working principle is based on the principle of electron tunneling.</p></div>

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