SI1013CX-T1-GE3

The SI1013CX-T1-GE3 is a single-pole, double-throw (SPDT) field-effect transistor (FET) designed for use in a variety of electronic switching applications. It features an AlGaAs/InGaAs/GaAs heterojunction soft material FET that is capable of operating over a wide range of temperatures and voltages. The device is also capable of high-speed switching and is suitable for a wide variety of applications, including power management, audio amplification, and signal switching.

This device operates on the principle of the depletion-mode FET, which relies on majority carriers which are injected into a channel below the gate to produce a conductive area for electrons to flow when a voltage is applied to the gate. This creates a conductive path between the Source and Drain terminals of the FET, allowing current to flow through the device when a voltage is applied at the gate. By using a voltage-controlled gate to vary the current, the FET can be used as a switch that can be operated electrically.

The SI1013CX-T1-GE3 is well-suited for use in a variety of electronic switching applications. It can be used in audio and video circuits to switch signals, or in power management circuits to control the flow and voltage of power. It is particularly useful in low-voltage, low-power applications where high-speed switching is required, as it is capable of switching at speeds up to 100 MHz.

The device features a high breakdown voltage of 40 V, and is available in an Analog CMOS (ACMOS) package for easy soldering. It is RoHS-compliant and is manufactured using high-quality process technologies, ensuring reliable operation and long-term durability.

The SI1013CX-T1-GE3 is an excellent choice for a wide variety of applications, such as audio amplification, signal switching, and power management. Its combination of high-speed switching and low-power operation make it an ideal choice for low-voltage and low-power applications.