SI4128BDY-T1-GE3

Series:	*
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Vgs (Max):	±25V

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The SI4128BDY-T1-GE3 is a Dynamic dV/dt Rating, N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used mainly in power supplies, general power switching applications, motor control, etc. It is manufactured by Vishay Siliconix and its drain-source breakdown voltage is rated at 50 V. Its drain source on-state resistance is rated at 1.8 Ohm, gate threshold voltage at 2.5 V, and the input capacitance at 1300 pF. The power dissipation of the SI4128BDY-T1-GE3 is up to 3 Watts. In general, an N-Channel MOSFET is used as a switch and is normally in the off (open circuit) state. When a voltage is applied to the gate, an electric charge accumulates (known as inversion layer), the MOSFET attracts holes from the N-doped drain-source to the gate and turns on (closed circuit). This allows the flow of current from drain to source, thus creating a closed switching path. The SI4128BDY-T1-GE3 can be used for different applications. As mentioned above, it is mainly used for power supplies, general power switching applications, and motor control. For example, it can be used for DC-DC converters, used in automotive systems and various industrial applications, such as Variable Frequency Drives (VFDs) or Uninterruptible Power Supplies (UPS). It can also be used in applications where high switching frequencies are required, such as TV receivers and telecommunication systems. Additionally, the SI4128BDY-T1-GE3 is small in size and has a low R DS(on) which makes it suitable for high-efficiency switching applications.The SI4128BDY-T1-GE3 is also capable of operating at high temperatures, up to 175°C. This makes it ideal for applications that require reliable performance in harsh environmental conditions, such as Automotive Power Management. The low gate charge makes the SI4128BDY-T1-GE3 ideal for high-speed switching applications where gate-drive power supply bounce can cause overshoot and ringing on the output.The SI4128BDY-T1-GE3’s dynamic dV/dt Rating enables reliable switching operation of the device under high-frequency switching, such as those imposed by pulse-width modulation (PWM) controllers. It can handle large voltage spikes without suffering from the drain-source breakdown. Its low gate-source threshold voltage, low thermal resistance and fast switching speeds allows the device to handle high peak-current pulses for applications including motor control, automotive power management, point-of-load converters and high-efficiency switching applications.The SI4128BDY-T1-GE3 is also known for being immune to Electrostatic Discharge (ESD), which makes it suitable for portable electronics and systems with stringent ESD requirements. It has an IDSS tolerance of ±20%. This tolerance ensures the device is suitable for operation at high temperatures and in high-power applications.In conclusion, the SI4128BDY-T1-GE3 is an optimal solution for power supplies, motor control and high-efficiency switching applications. This N-Channel MOSFET offers enhanced reliability, low resistance, and robustness and is also capable of operating at high temperatures. Its Dynamic dV/dt Rating and low gate threshold voltage combined with its gate-turn-off and ESD characteristics make it suitable for a wide range of applications and offer excellent performance.

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