SI4104DY-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4104DY-T1-GE3 is a single N-Channel enhancement mode power Field effect transistor designed for high-current switching and load-driving applications. It is based on a proprietary Ocean’s silicon High-Cell Density MOSFET Process Technology, which offers superior performance, high efficiency, and long-term silicon reliability. The device uses a high-voltage process, enabling the device to switch up to 18V. It features low on-resistance, low gate-threshold voltage, high drain-source breakdown voltage, and high slew rate for high-speed switching.

The device is suitable for a wide range of applications, including automotive, industrial, consumer, and computing. It can be used in cars and trucks to provide high power switching for lighting, cooling systems, and other automotive applications. In industrial applications, it can be used as a load driver, such as to turn on large pumps and motors. In consumer applications, it is used to provide power in consumer appliances, such as TVs, washing machines, and air conditioners. In computing, it is used in servers, routers, switches, and other network equipment.

The SI4104DY-T1-GE3 is a N-Channel MOSFET and works by allowing a current to flow from the drain to the source when a positive voltage is applied to the gate. When the gate voltage is 0V, the device is in the off-state and no current can flow. When a positive voltage is applied to the gate, the voltage increases and the device enters the on-state, allowing current to flow from the drain to the source. This makes it ideal for use in switch applications where high power is required.

The device features a low on-resistance which allows it to carry more current effectively, reducing losses due to power dissipation. It also has a low gate threshold voltage, which means that it can be switched faster, making it more suitable for faster switching applications. Additionally, it has a high breakdown voltage of 18V, which makes it better suited for use in higher voltage applications.

The SI4104DY-T1-GE3 also features an internal diode which can be used for reverse current protection. This diode is designed to prevent current from flowing in the reverse direction, protecting the device from unexpected surges or transients. The device also has an ESD protection design which prevents damage from electrostatic discharge.

In conclusion, the SI4104DY-T1-GE3 is a N-Channel MOSFET and is suitable for a wide range of applications. It has low on-resistance, low gate-threshold voltage, high breakdown voltage, and internal diode for reverse current protection. It can be used in automotive, industrial, consumer, and computing applications and is an ideal choice for high current switching and load-driving applications.

The specific data is subject to PDF, and the above content is for reference