SI4136DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4136DY-T1-GE3TR-ND

Manufacturer Part#:

SI4136DY-T1-GE3

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 46A 8-SOIC
More Detail: N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac...
DataSheet: SI4136DY-T1-GE3 datasheetSI4136DY-T1-GE3 Datasheet/PDF
Quantity: 15000
1 +: $ 0.33600
10 +: $ 0.32592
100 +: $ 0.31920
1000 +: $ 0.31248
10000 +: $ 0.30240
Stock 15000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4136DY-T1-GE3 is a single N-channel enhancement-mode Field Effect Transistor (FET). This type of transistor is used for a wide variety of applications, such as switching and amplifier circuits, as well as in general-purpose discrete applications.

The N-channel enhancement-mode FET is a three-terminal device with Source, Gate and Drain terminals. The device is made up of a channel from the source to the drain, through which a current flows when a voltage is applied to the gate.

The SI4136DY-T1-GE3 offers an array of features and benefits, making it suitable for a wide range of applications in various industries, such as:

  • Automotive
  • Telecommunications
  • Battery Management
  • Power Supply
  • Industrial

In automotive applications, the SI4136DY-T1-GE3 serves as a switch or amplifier in a variety of applications, such as vehicle power management, airbag systems and anti-lock braking systems. In telecommunications, FETs like the SI4136DY-T1-GE3 are used in a variety of circuits, such as switching, filtering and power management.

The SI4136DY-T1-GE3 is designed to handle up to 60V and is capable of switching up to 50mA of output current. It is also designed to handle up to 150°C junction temperature and up to 1V of gate voltage. It has a low on-state resistance of around 200mΩ.

The SI4136DY-T1-GE3 works by using a gate voltage to control the flow of current between its source and drain terminals. When a positive voltage is applied to the gate, it creates an electric field in the region between the source and drain terminals. This electric field reduces the channel resistance, allowing current to flow. Conversely, when a negative voltage is applied to the gate, the electric field is reversed and the channel resistance increases, thus preventing current from flowing.

The SI4136DY-T1-GE3 is an ideal choice for a variety of applications requiring a low-cost, fast-switching FET. It is designed to offer excellent reliability and performance due to its low on-state resistance, high temperature operation and high voltage handling.

The specific data is subject to PDF, and the above content is for reference

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