Allicdata Part #: | SI4176DY-T1-E3-ND |
Manufacturer Part#: |
SI4176DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A 8SO |
More Detail: | N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface ... |
DataSheet: | SI4176DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4176DY-T1-E3 is a logic-level, N-channel, enhancement-mode field-effect transistor (FET) from Vishay Siliconix. It is ideal for use where low on-resistance and fast switching is required. In addition to its low on-resistance and fast switching, the SI4176DY-T1-E3 also provides excellent output characteristics and is resistant to electrostatic discharge (ESD). Because of these features, it is suitable for a variety of applications, including power control, switching regulation and interface logic.
At the heart of the SI4176DY-T1-E3 is its N-channel MOSFET, which provides excellent switching characteristics and low on-resistance. The N-channel MOSFET acts as an electronic switch, controlling the flow of current through the device. It is controlled by the gate, which is connected to the input voltage source. When the voltage at the gate is lower than the source voltage, the MOSFET is off and no current flows through the device. When the voltage at the gate is greater than the source voltage, the MOSFET is on and current flows through the device.
The SI4176DY-T1-E3 also has an on-resistance of only 4 milliohms, which helps to keep power consumption to a minimum. In addition, the device is optimized for fast switching operations, making it ideal for high-speed applications. The device also has a gate-source voltage rating of 20 volts, which allows it to be used in both analog and digital designs. It is also resistant to electrostatic discharge, making it suitable for use in high-voltage/high-speed applications.
The SI4176DY-T1-E3 is therefore well suited for a variety of applications, including power control, switching regulators, and interface logic. In power control applications, the low on-resistance and fast switching characteristics of the device make it ideal for controlling the flow of current to loads. In switching regulation applications, the fast switching speed of the device helps to reduce the output ripple and improve the efficiency of the design. Finally, the device can be used as an interface logic element, allowing for the control of digital signals or for interfacing with analog signals.
In summary, the SI4176DY-T1-E3 is an excellent choice for applications requiring low on-resistance, fast switching, and resistance to electrostatic discharge. Its flexibility and ease of use make it suitable for a variety of applications, including power control, switching regulation, and interface logic. Its low on-resistance and fast switching speeds are especially beneficial in high-speed designs, making it a valuable addition to any design.
The specific data is subject to PDF, and the above content is for reference
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