SI4186DY-T1-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI4186DY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4186DY-T1-GE3 |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 35.8A 8SOIC |
| More Detail: | N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface ... |
| DataSheet: | SI4186DY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.24800 |
| 10 +: | $ 0.24056 |
| 100 +: | $ 0.23560 |
| 1000 +: | $ 0.23064 |
| 10000 +: | $ 0.22320 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 6W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3630pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35.8A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI4186DY-T1-GE3 is a P-Channel Enhancement Mode Field Effect Transistor, or FET for short. It is offered in a space saving single Dpak super-small plastic package and is commonly used in a variety of electronic applications. It is an ideal solution for applications that require low on-resistance and low operating current, such as audio amplifiers, motor control, switching and dc-dc converters.
The SI4186DY-T1-GE3 is a FET with a P-channel, which enables it to conduct current efficiently and with low on-resistance. The FET functions by controlling the flow of current through the P-channel using an electric field. The electric field is generated by an applied voltage across the source and drain. The P-channel operates by inducing a negative charge in the source region, which in turn repels the positive charges present in the drain region of the transistor. This controls the current flow through the transistor and is the principle behind its operation.
The SI4186DY-T1-GE3 has an on resistence of just 0.2 Ohms and an operating current of 0.6A, making it an ideal solution for applications that require low on-resistance and low operating current. It is reliable, fast switching and provides a high level of protection against ESD (ElectroStatic Discharge). It also offers low RDS(on) for enhanced performance.
The SI4186DY-T1-GE3 is an ideal solution for applications such as audio amplifiers, motor control, switching, dc-dc converters, voltage regulators, load switches and power supply designs where space saving is an important design consideration. It is also suitable for use in low-voltage and high-frequency applications. Its versatility make it a valuable component for a variety of electronic applications.
In summary, the SI4186DY-T1-GE3 P-Channel Enhancement Mode Field Effect Transistor is a reliable and efficient solution for applications that require low on-resistance and low operating current. Its low RDS(on) and fast switching make it a versatile solution for a variety of applications. It is offered in a space saving single Dpak super-small plastic package to enable designers to take full advantage of its low on-resistance and low operating current capabilities.
The specific data is subject to PDF, and the above content is for reference
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SI4186DY-T1-GE3 Datasheet/PDF