Allicdata Part #: | SI4176DY-T1-GE3-ND |
Manufacturer Part#: |
SI4176DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A 8-SOIC |
More Detail: | N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface ... |
DataSheet: | SI4176DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4176DY-T1-GE3 (data sheet) is a power field-effect transistor (power FET) designed for a range of switching and linear applications, primarily in high-energy DC/DC buck converter architectures. This power MOSFET from Vishay Siliconix is built on a trench technology platform to minimize conduction losses, allowing for maximum efficiency and improved power density.
The basic concepts at work in the SI4176DY-T1-GE3 are those of an insulated gate field-effect transistor, or IGFET, commonly referred to as a MOSFET, short for metal-oxide-semiconductor transistor. The gate controls the application of a voltage to the channel between the source and drain, thereby controlling the current that flows between the source and drain. This is enabled by a unique shrinking process wherein the silicon-nitride insulating layer is applied between the gate and the channel, thus allowing the gate to control the size of the channel effectively.
The SI4176DY-T1-GE3 features an advanced-technology trench MoS2 substrate, which enables the device to provide better switching performance and robust on-resistance and low gate charge characteristics. This enables the SI4176DY-T1-GE3 to use faster switching speeds with less switching losses and overall improved efficiency in power applications.
Key characteristics of the SI4176DY-T1-GE3 include an excellent response to gate signals for improved timing interleaving and resolution, and DirectFET power package technology for higher current carrying capability and improved transfer characteristics. The device also features low drain-to-source on-resistance enabling it to handle high load currents at lower gate voltages. Additionally, the device offers a low input capacitance, which provides improved system efficiency at high frequencies and allows for higher switching speeds.
The SI4176DY-T1-GE3 is particularly well-suited for high-current switching applications including DC/DC converters, half-bridge and full-bridge drivers, resonant converters, as well as in automotive, industrial and consumer markets. In these applications, the SI4176DY-T1-GE3 can significantly reduce overall system cost and improve power efficiency.
The specific data is subject to PDF, and the above content is for reference
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