SI4401DDY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4401DDY-T1-GE3TR-ND

Manufacturer Part#:

SI4401DDY-T1-GE3

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 40V 16.1A 8-SOIC
More Detail: P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surf...
DataSheet: SI4401DDY-T1-GE3 datasheetSI4401DDY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.27083
10 +: $ 0.23472
100 +: $ 0.18958
1000 +: $ 0.18056
10000 +: $ 0.17153
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4401DDY-T1-GE3 is a depletion mode general-purpose MOSFET, which is suitable for use in high-power and high-speed circuits, especially power electronic applications. The transistor is manufactured in a special silicon-on-insulator technology to provide superior device performance and reliability. This device has a low on-state resistance, low leakage current, and an improved thermal characteristics.

Application Field

The SI4401DDY-T1-GE3 is an excellent choice for a variety of power applications, from motors, solenoids, high voltage circuits, switching regulators, DC-DC converters, SMPS, and lighting systems. It can be used in low-voltage power switching circuits, power management applications, DC-DC converters and UPS systems. The MOSFET features a low on-state resistance, allowing for better current handling, and improved power efficiency.

Additionally, the device is suitable in high frequency switching applications such as switching power supplies, mobile wireless base station power converters and others. Moreover, the integrated gate protection keeps the gate voltage and electrostatic discharge (ESD) away from the channel, protecting the MOSFET.

Working Principle

The SI4401DDY-T1-GE3 is a depletion-mode MOSFET, meaning that with no gate voltage applied, the transistor is on, and hence supplying a load or outputting to a load. Applying a positive gate-source voltage creates a reverse-biased PN junction between the source and gate, which turns off the transistor, enabling it to act as a switch. As the voltage across the drain and source increases, the resistance between them also increases, allowing for better current regulation, and improved power efficiency.

The device features a low thermal resistance, which significantly improves its thermal performance even in high frequency and current applications. Additionally, the device is equipped with a built-in gate protection circuit, which helps in reducing gate noise and preventing the buildup of static charges.

Conclusion

The SI4401DDY-T1-GE3 is an excellent choice for a multitude of power applications, including switching regulators, motor drives, power management and DC-DC converters. Featuring a low thermal resistance, superior device performance and low leakage current, the device is well suited for high efficiency power electronics applications, with improved current handling capabilities and improved power efficiency. Additionally, the built-in gate protection circuit helps protect the MOSFET from static charges and gate voltage noise, keeping it in top condition.

The specific data is subject to PDF, and the above content is for reference

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