
Allicdata Part #: | SI4401DDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4401DDY-T1-GE3 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 16.1A 8-SOIC |
More Detail: | P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.27083 |
10 +: | $ 0.23472 |
100 +: | $ 0.18958 |
1000 +: | $ 0.18056 |
10000 +: | $ 0.17153 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 6.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3007pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 10.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.1A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4401DDY-T1-GE3 is a depletion mode general-purpose MOSFET, which is suitable for use in high-power and high-speed circuits, especially power electronic applications. The transistor is manufactured in a special silicon-on-insulator technology to provide superior device performance and reliability. This device has a low on-state resistance, low leakage current, and an improved thermal characteristics.
Application Field
The SI4401DDY-T1-GE3 is an excellent choice for a variety of power applications, from motors, solenoids, high voltage circuits, switching regulators, DC-DC converters, SMPS, and lighting systems. It can be used in low-voltage power switching circuits, power management applications, DC-DC converters and UPS systems. The MOSFET features a low on-state resistance, allowing for better current handling, and improved power efficiency.
Additionally, the device is suitable in high frequency switching applications such as switching power supplies, mobile wireless base station power converters and others. Moreover, the integrated gate protection keeps the gate voltage and electrostatic discharge (ESD) away from the channel, protecting the MOSFET.
Working Principle
The SI4401DDY-T1-GE3 is a depletion-mode MOSFET, meaning that with no gate voltage applied, the transistor is on, and hence supplying a load or outputting to a load. Applying a positive gate-source voltage creates a reverse-biased PN junction between the source and gate, which turns off the transistor, enabling it to act as a switch. As the voltage across the drain and source increases, the resistance between them also increases, allowing for better current regulation, and improved power efficiency.
The device features a low thermal resistance, which significantly improves its thermal performance even in high frequency and current applications. Additionally, the device is equipped with a built-in gate protection circuit, which helps in reducing gate noise and preventing the buildup of static charges.
Conclusion
The SI4401DDY-T1-GE3 is an excellent choice for a multitude of power applications, including switching regulators, motor drives, power management and DC-DC converters. Featuring a low thermal resistance, superior device performance and low leakage current, the device is well suited for high efficiency power electronics applications, with improved current handling capabilities and improved power efficiency. Additionally, the built-in gate protection circuit helps protect the MOSFET from static charges and gate voltage noise, keeping it in top condition.
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