SI4409DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4409DY-T1-GE3TR-ND

Manufacturer Part#:

SI4409DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 150V 1.3A 8-SOIC
More Detail: P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surf...
DataSheet: SI4409DY-T1-GE3 datasheetSI4409DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
FET Feature: --
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4409DY-T1-GE3 is part of a family of N-channel enhancement mode MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) developed by Vishay Siliconix. These devices can be used in a wide range of applications, where a reliable switch is required. With their ability to handle up to 25V, the SI4409DY-T1-GE3 allows for a wide range of voltage-controlled applications.

A MOSFET is an electronic device that is similar to a transistor, but instead of having three connections, it has four connections: the drain, the source, the gate and the body. The MOSFET acts as a switch, controlling the current flow through the device. It can be used to control the current flow from the source (current source) to the drain (load) or vice versa. The voltage applied to the gate terminal determines the amount of current allowed to flow through the device, and the current can be adjusted by changing the voltage at the gate terminal.

The SI4409DY-T1-GE3 is a N-channel enhancement mode MOSFET, which means that the current flows between the drain and source terminals when a positive voltage is applied to the gate terminal. An enhancement mode MOSFET has an improved frequency response, enabling higher switching speeds over other MOSFETs. This makes the SI4409DY-T1-GE3 ideal for use in high-speed switching applications, such as PWM circuit, motor control, and DC-DC converters.

The SI4409DY-T1-GE3 has a drain-to-source breakdown voltage (VDSS) of 25V, which allows for reliable switching of up to 25V with low gate leakage current. It also has a low gate-to-drain capacitance (CGS) of 28pF, making it suitable for use in high-frequency switching applications. The device also has a maximum continuous drain current (ID) of 40A, allowing it to handle larger loads without suffering from significant power loss.

In addition, the SI4409DY-T1-GE3 has a high power dissipation rating of 80.7 W and a low on-resistance of 11 mΩ, making it highly efficient in applications such as synchronous rectifiers, brushless DC motors, and LED lighting. It also has a very low operating temperature (-55°C – 150°C) allowing it to be used in a wide range of temperature environments.

The SI4409DY-T1-GE3 is a versatile device that can be used in a variety of applications, including power switching and motor control. Its low capacitance, low on-resistance and high current handling capability make it ideal for high frequency and power circuits. The device also offers excellent thermal stability, enabling its use in high temperature environments.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI44" Included word is 40
Part Number Manufacturer Price Quantity Description
SI4448DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 12V 50A 8-SOI...
SI4401DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 40V 8.7A 8-SO...
SI4404DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 15A 8-SOI...
SI4412ADY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 5.8A 8-SO...
SI4465ADY-T1-GE3 Vishay Silic... 0.68 $ 5000 MOSFET P-CH 8V 8SOICP-Cha...
SI4430BDY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 14A 8-SOI...
SI4447DY-T1-GE3 Vishay Silic... -- 2500 MOSFET P-CH 40V 3.3A 8-SO...
SI4410DY,518 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V SOT96-1N-...
SI4410DY Infineon Tec... -- 1000 MOSFET N-CH 30V 10A 8-SOI...
SI4435DYTR Infineon Tec... -- 1000 MOSFET P-CH 30V 8A 8-SOIC...
SI4420DY Infineon Tec... -- 1000 MOSFET N-CH 30V 12.5A 8-S...
SI4410DYPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 10A 8-SOI...
SI4420DYPBF Infineon Tec... -- 1000 MOSFET N-CH 30V 12.5A 8-S...
SI4435DYPBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 30V 8A 8-SOIC...
SI4420DYTR Infineon Tec... -- 1000 MOSFET N-CH 30V 12.5A 8-S...
SI4403BDY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 7.3A 8SOI...
SI4409DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 150V 1.3A 8-S...
SI4418DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 200V 2.3A 8-S...
SI4446DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 40V 3.9A 8-SO...
SI4470EY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 60V 9A 8-SOIC...
SI4484EY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 4.8A 8-S...
SI4401DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 40V 8.7A 8-SO...
SI4404DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 15A 8-SOI...
SI4406DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 13A 8-SOI...
SI4406DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 13A 8-SOI...
SI4409DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 150V 1.3A 8-S...
SI4411DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 9A 8-SOIC...
SI4411DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 9A 8-SOIC...
SI4412ADY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 5.8A 8-SO...
SI4438DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 36A 8-SOI...
SI4438DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 36A 8-SOI...
SI4448DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 12V 50A 8-SOI...
SI4453DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 10A 8-SOI...
SI4453DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 10A 8-SOI...
SI4462DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 200V 1.15A 8-...
SI4466DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 9.5A 8-SO...
SI4483EDY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 10A 8-SOI...
SI4486EY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 5.4A 8-S...
SI4493DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 10A 8SOIC...
SI4493DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 10A 8SOIC...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics