Allicdata Part #: | SI4409DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4409DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 150V 1.3A 8-SOIC |
More Detail: | P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surf... |
DataSheet: | SI4409DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 332pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 2.2W (Ta), 4.6W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The SI4409DY-T1-GE3 is part of a family of N-channel enhancement mode MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) developed by Vishay Siliconix. These devices can be used in a wide range of applications, where a reliable switch is required. With their ability to handle up to 25V, the SI4409DY-T1-GE3 allows for a wide range of voltage-controlled applications.
A MOSFET is an electronic device that is similar to a transistor, but instead of having three connections, it has four connections: the drain, the source, the gate and the body. The MOSFET acts as a switch, controlling the current flow through the device. It can be used to control the current flow from the source (current source) to the drain (load) or vice versa. The voltage applied to the gate terminal determines the amount of current allowed to flow through the device, and the current can be adjusted by changing the voltage at the gate terminal.
The SI4409DY-T1-GE3 is a N-channel enhancement mode MOSFET, which means that the current flows between the drain and source terminals when a positive voltage is applied to the gate terminal. An enhancement mode MOSFET has an improved frequency response, enabling higher switching speeds over other MOSFETs. This makes the SI4409DY-T1-GE3 ideal for use in high-speed switching applications, such as PWM circuit, motor control, and DC-DC converters.
The SI4409DY-T1-GE3 has a drain-to-source breakdown voltage (VDSS) of 25V, which allows for reliable switching of up to 25V with low gate leakage current. It also has a low gate-to-drain capacitance (CGS) of 28pF, making it suitable for use in high-frequency switching applications. The device also has a maximum continuous drain current (ID) of 40A, allowing it to handle larger loads without suffering from significant power loss.
In addition, the SI4409DY-T1-GE3 has a high power dissipation rating of 80.7 W and a low on-resistance of 11 mΩ, making it highly efficient in applications such as synchronous rectifiers, brushless DC motors, and LED lighting. It also has a very low operating temperature (-55°C – 150°C) allowing it to be used in a wide range of temperature environments.
The SI4409DY-T1-GE3 is a versatile device that can be used in a variety of applications, including power switching and motor control. Its low capacitance, low on-resistance and high current handling capability make it ideal for high frequency and power circuits. The device also offers excellent thermal stability, enabling its use in high temperature environments.
The specific data is subject to PDF, and the above content is for reference
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