SI4480DY-T1-E3

The SI4480DY-T1-E3 is a Field Effect Transistor (FET) designed for use in high power applications. It is a single Gate N-Channel FET, which is capable of switching loads up to 20A in a compact package. It is manufactured by Infineon Technologies, and is part of the CoolMOS family. The SI4480DY-T1-E3 is particularly suited for applications such as synchronous rectification in AC/DC power supplies, motor control, high power switched mode power supplies, high side switching and automotive applications.

The SI4480DY-T1-E3 is a stationary gate Field Effect Transistor (FET). It is constructed with N-type material, which has its source and drain connections at the opposite ends, and a gate contact at the top or middle of the device. A gate voltage is used to control the conduction of current through the device by modifying the width of the N-type channel between the source and drain connections.

The SI4480DY-T1-E3 employs the latest in monolithic construction technology and process design. The double-diffused MOSFET (DMOS) technology is used to eliminate theneed for an external driver circuit. This enables the device to switch loads up to 20A with a single gate voltage. The device is manufactured using a high performance process which provides for a maximum drain-to-source drain current of 20A, a drain-to-source voltage of 500V, and a gate-to-source voltage of 20V at 25°C.

The working principle of the SI4480DY-T1-E3 is relatively simple. The gate voltage is used to control the conduction of current through the device by modifying the width of the N-type channel between the source and drain connections. The gate voltage is adjustable, varying the width of the channel and allowing more or less current to flow. The device can be used to switch DC loads and can be used in both low-side and high-side switches, meaning it can be used to control both positive and negative DC loads.

The SI4480DY-T1-E3 is a versatile device and can be used in a wide variety of applications. It is suitable for synchronous rectification in AC/DC power supplies, motor control, high power switched-mode power supplies and automotive applications. It also features a low on-resistance and easy to useinterface. In addition, it has an operational temperature range from -40°C to 125°C, making it suitable for use in a wide range of environments.

In summary, the SI4480DY-T1-E3 is a versatile Field Effect Transistor (FET) designed for use in high power applications. It is a single Gate N-Channel FET, capable of switching loads up to 20A in a compact package. It is manufactured by Infineon Technologies, and is part of the CoolMOS family. The SI4480DY-T1-E3 employs the latest in monolithic construction technology and process design and is suitable for use in a wide range of environments. The principle of operation is based on a gate voltage that controls the conduction of current through the device by modifying the width of the N-type channel between the source and drain connections.