SI4427BDY-T1-E3

The SI4427BDY-T1-E3 is a P-channel enhancement mode field effect transistor (FET). It is ideal for a wide range of applications including power management, load switching, battery protection, voltage clamping and protection for load circuits.

The SI4427BDY-T1-E3 is designed for a drain-to-source voltage rating of up to 20V, and an on-state drain current of up to 500mA. It has low gate-source voltage operation and low gate-source capacitance, providing an effective solution for a wide range of switching applications.

The SI4427BDY-T1-E3 has an operating temperature range of -55 to +150°C, and it is available in a 3-pin SOT-23 package. It is suitable for high speed switching applications, thanks to its low on-state resistance of 545mΩ typ. at 5V.

Application Field

The SI4427BDY-T1-E3 is widely used in power management, load switching, battery protection, voltage clamping and protection for load circuits. It is ideally suited for controlling and managing power through voltage clamping and load switching operations. It can be used for both high and low-side switching applications. Additionally, it can be integrated with a variety of other components and ICs, such as comparators, operational amplifiers and voltage regulators.

It can also be used in battery protection applications, where it is ideally suited for low current applications. This makes it ideal for standby power or portable applications. The SI4427BDY-T1-E3’s low gate

The specific data is subject to PDF, and the above content is for reference