Allicdata Part #: | SI4430BDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4430BDY-T1-GE3 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 14A 8-SOIC |
More Detail: | N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4430BDY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.49924 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4430BDY-T1-GE3 is a high-performance logic-level N-Channel MOSFET from Vishay Semiconductor. It is designed to provide high performance and robust switching capabilities in a variety of applications. The device is offered in a 4-pin package and is suitable for standard through-hole mounting. It is rated for a continuous current of 20A and a total power dissipation of 57.1W. It ensures the required operating temperature range of -55C to 150C.
This device has four pins and is constructed in a vertical configuration for board layout flexibility. The drain and source pins are positioned on the top and bottom of the package, and the gate and substrate pins are positioned on the left and right sides. All of the pins are connected to the substrate connection at the back of the package. The drain is the positive voltage supply, the source is the negative voltage supply, and the gate is the control voltage.
The SI4430BDY-T1-GE3 operates by applying a voltage to the gate that is higher than the voltage applied to the source terminal. This creates a channel between the source and drain and allows current to flow between them. As long as the gate voltage remains high, the channel will remain open. When the gate voltage is reduced, the channel is closed and no current can flow. This is the basic working principle of this MOSFET.
This device can be used in various types of applications, including DC/DC converters, motor control circuits, switching power supplies, and power amplifiers. It is also suitable for medical, industrial, and consumer electronics applications. Its high current and power handling capabilities make it well-suited for use as an EMI filter switch and as a load switch in power circuit designs. Its low profile and low on-resistance can also be beneficial for applications that require high switching speeds.
In summary, the SI4430BDY-T1-GE3 is a high-performance logic-level N-Channel MOSFET from Vishay Semiconductor. It has four pins and is rated for a continuous current of 20A and a total power dissipation of 57.1W. It is suitable for applications such as DC/DC converters, motor control circuits, switching power supplies, and power amplifiers. Its high current and power handling capabilities make it suitable for use as an EMI filter switch and as a load switch in power circuit designs. Its low profile and low on-resistance make it well-suited for applications that require high switching speeds.
The specific data is subject to PDF, and the above content is for reference
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