SI4430BDY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4430BDY-T1-GE3TR-ND

Manufacturer Part#:

SI4430BDY-T1-GE3

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 14A 8-SOIC
More Detail: N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-S...
DataSheet: SI4430BDY-T1-GE3 datasheetSI4430BDY-T1-GE3 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.49924
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4430BDY-T1-GE3 is a high-performance logic-level N-Channel MOSFET from Vishay Semiconductor. It is designed to provide high performance and robust switching capabilities in a variety of applications. The device is offered in a 4-pin package and is suitable for standard through-hole mounting. It is rated for a continuous current of 20A and a total power dissipation of 57.1W. It ensures the required operating temperature range of -55C to 150C.

This device has four pins and is constructed in a vertical configuration for board layout flexibility. The drain and source pins are positioned on the top and bottom of the package, and the gate and substrate pins are positioned on the left and right sides. All of the pins are connected to the substrate connection at the back of the package. The drain is the positive voltage supply, the source is the negative voltage supply, and the gate is the control voltage.

The SI4430BDY-T1-GE3 operates by applying a voltage to the gate that is higher than the voltage applied to the source terminal. This creates a channel between the source and drain and allows current to flow between them. As long as the gate voltage remains high, the channel will remain open. When the gate voltage is reduced, the channel is closed and no current can flow. This is the basic working principle of this MOSFET.

This device can be used in various types of applications, including DC/DC converters, motor control circuits, switching power supplies, and power amplifiers. It is also suitable for medical, industrial, and consumer electronics applications. Its high current and power handling capabilities make it well-suited for use as an EMI filter switch and as a load switch in power circuit designs. Its low profile and low on-resistance can also be beneficial for applications that require high switching speeds.

In summary, the SI4430BDY-T1-GE3 is a high-performance logic-level N-Channel MOSFET from Vishay Semiconductor. It has four pins and is rated for a continuous current of 20A and a total power dissipation of 57.1W. It is suitable for applications such as DC/DC converters, motor control circuits, switching power supplies, and power amplifiers. Its high current and power handling capabilities make it suitable for use as an EMI filter switch and as a load switch in power circuit designs. Its low profile and low on-resistance make it well-suited for applications that require high switching speeds.

The specific data is subject to PDF, and the above content is for reference

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