
Allicdata Part #: | SI4485DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4485DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 6A 8-SOIC |
More Detail: | P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI4485DY-T1-GE3 is an silicon based Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) that is widely used as an electronic switch in various kinds of electronic equipment. This transistor has a voltage rating of 30 volts, and a maximum conducting current of 8amps. It belongs to the type of MOSFET which is called a Single Enhancement-Mode Field Effect Transistor, or SEFET.
The main application of this type of transistor is for switching, where the MOSFET is used as a switch between two nodes in an electrical circuit. This transistor can switch very quickly and is used in applications such as high-speed data communications, power conversion, motor control and audio amplification.
The working principle of the SI4485DY-T1-GE3 transistor is to operate on the principle of the Depletion Mode MOSFET. This is a type of MOSFET in which the gate is at a higher potential than the source and drain. This causes the channel between the source and the drain which is called the depletion region, to remain conductive even when there is no applied voltage.
Once an external voltages is applied, electrons from the current source diffuse across the depletion region to the drain terminal. This current of electrons is called the drive current, and it increases the voltage between the source and the drain. When the voltage reaches the threshold voltage, the channel turns off and the MOSFET enters the off state.
The SI4485DY-T1-GE3 is widely used in many electronic applications because it is a low cost, low on-resistance transistor and able to switch very quickly and efficiently. In addition, it has excellent frequency response, making it very suitable for use in high speed communications and Power conversion applications.
In conclusion, the SI4485DY-T1-GE3 is a single enhancement-mode MOSFET that is widely used as an electronic switch in many different applications. It is a low cost, low on-resistance transistor that is able to switch very quickly and efficiently. It is also suitable for use in high speed communications and power conversion applications because of its excellent frequency response.
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