SI4465ADY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4465ADY-T1-E3TR-ND |
Manufacturer Part#: |
SI4465ADY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 8SOIC |
More Detail: | P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-S... |
DataSheet: | SI4465ADY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 6.5W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 14A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI4465ADY-T1-E3 is a type of transistor that is frequently used in digital and analog circuits. It is a single-channel, normally-on field-effect transistor (FET). A FET is an active device that is used to control the conductivity of an electrical path between the source and the drain. SI4465ADY-T1-E3 has a very large input resistance and provides high current carrying capability.
The SI4465ADY-T1-E3 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It utilizes metal-oxide as the gate material to control the current flow between the source and the drain. The device is normally “on” meaning that it has a low threshold voltage and does not require a gate “on” voltage to turn it off. In order for the device to be turned off, the input voltage must exceed its threshold voltage.
The key specifications of the SI4465ADY-T1-E3 include its on-state resistance, gate threshold voltage, gate-drain leakage current, drain current, and drain-source breakdown voltage. The device has an on-state resistance of 2.7 ohms and a gate threshold voltage of -2.2 volts. It can operate at a maximum drain current of 0.25 amperes. Its drain source breakdown voltage is rated at 60 volts. An advantage of this device is that it can handle relatively high power dissipation.
The SI4465ADY-T1-E3 is most commonly used in digital circuits. It is often used as a switch to enable or disable a power supply. It can also be used in analog applications such as voltage regulation and power conditioning. Due to its ability to handle relatively high power dissipation, it is used in power management control circuits.
This device is also used for pulse width modulation (PWM). PWM is a technique used to control the speed of electric motors or fans. The SI4465ADY-T1-E3 used in PWM is turned on and off within a given period to control the speed of the motor. PWM is also used in battery control applications to manage the charge and discharge of batteries.
The SI4465ADY-T1-E3 is also used in switching power supplies. It is used to regulate the amount of current flowing through the inductor in the power supply and to provide protection for the circuits that it powers. It is also used in amplifier circuits to control the amount of current flowing to the output.
In summary, the SI4465ADY-T1-E3 is a single-channel, normally-on FET transistor device. It is mainly used in digital and analog applications such as power management, pulse width modulation, switching power supplies, and power conditioning. It has a large on-state resistance and provides high current carrying capability. It is also used in battery control and amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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