SI4412ADY-T1-E3

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The SI4412ADY-T1-E3 is an advanced integrated MOSFET featuring an on-state resistance of less than one ohm. The device also features a normally low gate threshold voltage VGS(th). This advanced device combines the advantages of 3.2V technology with a simple, fast switching speed and low on-state resistance. The combination of these features makes the SI4412ADY-T1-E3 ideal for a variety of applications including power switches, motor control, and amplifiers.

The SI4412ADY-T1-E3 is a normally low-threshold n-channel MOSFET. The device is available in both DPAK and TO-251 packages, with a maximum drain current of 19 Amps and a maximum drain-source voltage of 18V. The on-state resistance of the device is less than one ohm. The device also features a maximum junction-temperature of 175°C, making it suitable for high temperature applications.

The SI4412ADY-T1-E3 is a depletion-mode MOSFET and exhibits a normally low gate threshold voltage. This makes the device ideal for applications that require fast switching and low on-state resistance. The device can be used in applications such as power switches, motor control, and amplifiers. The device also features low noise operation and is available in both DPAK and TO-251 packages.

The SI4412ADY-T1-E3 works by having an input signal pass through the gate of the MOSFET, controlling the flow of current through the drain and source. When the input signal is low, the MOSFET is said to be off and no current flows through the drain and source. When the input signal is high, the MOSFET is said to be on and current will flow through the drain and source. This type of MOSFET is ideal for applications that require fast switching, low on-state resistance and high current handling.

In terms of application fields, the SI4412ADY-T1-E3 is well-suited for a variety of power switching applications. Its low on-state resistance and fast switching speed are beneficial for high current applications such as motor control and amplifiers. Its high junction-temperature makes it suitable for high temperature applications. The device is also available in both DPAK and TO-251 packages, allowing it to be used in various designs.

Overall, the SI4412ADY-T1-E3 is an advanced MOSFET featuring a low on-state resistance, fast switching speed, and low gate threshold voltage. The device is suitable for a variety of different application fields, including power switches, motor control, and amplifiers. It is available in both DPAK and TO-251 packages and features a maximum junction-temperature of 175°C. The device can be used in designs requiring fast switching and low on-state resistance.

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