
Allicdata Part #: | SI4425BDY-T1-E3TR-ND |
Manufacturer Part#: |
SI4425BDY-T1-E3 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 8.8A 8-SOIC |
More Detail: | P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 22500 |
1 +: | $ 0.34000 |
10 +: | $ 0.32980 |
100 +: | $ 0.32300 |
1000 +: | $ 0.31620 |
10000 +: | $ 0.30600 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 11.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4425BDY-T1-E3 is a high-voltage power MOSFET offering superior performance in an extremely small package. It is available in a tiny QFN-6 package that allows for low RDS (on) performance, capacity for higher current and designed for high switching speeds. This makes the SI4425BDY-T1-E3 a great choice for advanced and high-speed systems. Its superior switching characteristics and low operating RDS (on) make it an ideal choice for use in high-voltage DC-DC applications.
The SI4425BDY-T1-E3 is a single N-channel power MOSFET. It has a maximum drain source voltage (VDS) of 55V, with a maximum gate source voltage (VGS) of 28V. This makes it can be reliably used with significant power and high switching speeds. At a maximum drain current of 11A and a typical high frequency operation of 4GHz, it can be used for high-power applications.
Yet, the real standout feature of the SI4425BDY-T1-E3 is its RDS(on). Thanks to its advanced design and superior thermal resistance, it has a typical RDS(on) of just 0.0058 Ω (@3.2V VGS). This low RDS(on) helps reduce the switching losses, while allowing for higher current. Overall, this drastically improves its performance.
But the SI4425BDY-T1-E3 is not just about technical performance. It also excels in terms of design. For instance, its tiny QFN-6 package allows for improved board density and high-speed operation. As a result, the SI4425BDY-T1-E3 can be used in a wide range of applications.
In terms of applications, the primary focus of the SI4425BDY-T1-E3 is high-voltage, high-speed digital switching. Typical areas of use include automotive power steering systems, industrial motor control, solenoid control, and DC-DC converters. Additionally, its advanced thermal and switching characteristics make it well-suited for use in high-efficiency solar and LED lighting applications.
The SI4425BDY-T1-E3 is a high-performance power MOSFET that can be used in a wide range of demanding applications. Its superior switching performance and low RDS(on) allow it to offer improved system efficiency, while its small package makes it easy to use in high-density applications. As such, the SI4425BDY-T1-E3 is a great choice for anyone looking to bring their designs up to the next level.
The specific data is subject to PDF, and the above content is for reference
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