SI4425BDY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4425BDY-T1-E3TR-ND

Manufacturer Part#:

SI4425BDY-T1-E3

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 8.8A 8-SOIC
More Detail: P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-...
DataSheet: SI4425BDY-T1-E3 datasheetSI4425BDY-T1-E3 Datasheet/PDF
Quantity: 22500
1 +: $ 0.34000
10 +: $ 0.32980
100 +: $ 0.32300
1000 +: $ 0.31620
10000 +: $ 0.30600
Stock 22500Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4425BDY-T1-E3 is a high-voltage power MOSFET offering superior performance in an extremely small package. It is available in a tiny QFN-6 package that allows for low RDS (on) performance, capacity for higher current and designed for high switching speeds. This makes the SI4425BDY-T1-E3 a great choice for advanced and high-speed systems. Its superior switching characteristics and low operating RDS (on) make it an ideal choice for use in high-voltage DC-DC applications.

The SI4425BDY-T1-E3 is a single N-channel power MOSFET. It has a maximum drain source voltage (VDS) of 55V, with a maximum gate source voltage (VGS) of 28V. This makes it can be reliably used with significant power and high switching speeds. At a maximum drain current of 11A and a typical high frequency operation of 4GHz, it can be used for high-power applications.

Yet, the real standout feature of the SI4425BDY-T1-E3 is its RDS(on). Thanks to its advanced design and superior thermal resistance, it has a typical RDS(on) of just 0.0058 Ω (@3.2V VGS). This low RDS(on) helps reduce the switching losses, while allowing for higher current. Overall, this drastically improves its performance.

But the SI4425BDY-T1-E3 is not just about technical performance. It also excels in terms of design. For instance, its tiny QFN-6 package allows for improved board density and high-speed operation. As a result, the SI4425BDY-T1-E3 can be used in a wide range of applications.

In terms of applications, the primary focus of the SI4425BDY-T1-E3 is high-voltage, high-speed digital switching. Typical areas of use include automotive power steering systems, industrial motor control, solenoid control, and DC-DC converters. Additionally, its advanced thermal and switching characteristics make it well-suited for use in high-efficiency solar and LED lighting applications.

The SI4425BDY-T1-E3 is a high-performance power MOSFET that can be used in a wide range of demanding applications. Its superior switching performance and low RDS(on) allow it to offer improved system efficiency, while its small package makes it easy to use in high-density applications. As such, the SI4425BDY-T1-E3 is a great choice for anyone looking to bring their designs up to the next level.

The specific data is subject to PDF, and the above content is for reference

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