SI4483ADY-T1-GE3 Discrete Semiconductor Products

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Today\'s rapidly growing electronics industry is filled with advanced technologies such as transistors and FETs. Among these components, the SI4483ADY-T1-GE3 is a widely used N-channel, logic-level enhancement mode power field-effect transistor (FET). This FET can be used in a variety of applications and has become increasingly popular due to its impressive performance.

The SI4483ADY-T1-GE3 is a low resistance device, with an rDS(On) of only 0.25 ohms, suitable for low voltage operation. It is based on trench MOSFET technology, which includes a dielectric layer between the gate and the substrate, enabling resistance to gouging and breakdown. The device also features an impressive threshold voltage of 2.5V, an on-off ratio of 1000V/µA, and an operating temperature of -40°C to +175°C.

Due to its excellent electrical characteristics and low voltage operation, the SI4483ADY-T1-GE3 is suitable for linear or saturated applications. For example, it can be used in switching power supply applications such as AC/DC converters, DC/DC converters, DC/AC inverters, as well as motor control, LED lighting, and relay drivers. Furthermore, it is compatible with high-performance MOSFETs and can be used with a wide range of design topologies.

The SI4483ADY-T1-GE3 is a logic level device, meaning it has low current requirements for both turning on and turning off transistors. A gate voltage of 7V is required for turning on transistors and can be accomplished easily via a logic gate output. The gate-source voltage of the FET is only 9V, which ensures low conduction losses. The junction-to-ambient thermal resistance of the device is only 0.3°C/W, which prevents overheating.

The SI4483ADY-T1-GE3 has a low drain-source capacitance, making it suitable for high-speed switching applications. This FET also features a wide gate-source voltage range of -5V to 20V, which allows for a variety of control options. In addition, the FET has an impressive dV/dt rating of 2100V/µs, making it well suited for use in high frequency designs.

The SI4483ADY-T1-GE3 is a versatile FET, suitable for a variety of applications. Its low rDS(On) and gate voltage make it an ideal choice for low voltage, efficiency-critical operations, such as motor control and switching power supply applications. Its wide gate-source voltage range and high dV/dt rating make it suitable for high-speed switching applications. Furthermore, its low thermal resistance ensures reliable operation in high-temperature environments.

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