SI4404DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4404DY-T1-E3 is an n-channel enhancement-mode field-effect transistor (FET) processed with an advanced high-voltage CMOS technology specifically designed to offer low RDS(ON), optimized Qg and Qgs, and fast switching performance. This transistor can be used as a stand-alone switch or as part of a larger logic circuit.

The SI4404DY-T1-E3 is commonly used in a wide variety of consumer electronics, such as smart phones, tablets, wearable devices, and sensors, to turn the power supply on or off. It is also used in larger electronic systems to isolate or combine circuits. Its fast switching times coupled with low power consumption make it an ideal choice for a variety of applications.

The SI4404DY-T1-E3 is an n-channel enhancement-mode field-effect transistor (FET) that is formed by four distinct layers: a substrate, gate oxide, control gate, and source/drain. The source and drain are the regions of a device through which the current flows. The gate oxide layer is present to limit the amount of current that flows through the device. The control gate is essentially a voltage-controlled switch that determines which way the current will flow.

The operation of the SI4404DY-T1-E3 is quite simple. A positive voltage is applied to the gate, allowing the current to flow from the source to the drain. When the voltage is removed, the current flow is cut off. This makes it very useful in applications where precise control of the current flow is necessary.

The SI4404DY-T1-E3 is a very versatile device and can be used in many different types of applications including switching power supplies, amplifiers, logic circuits, and automotive applications. Its fast switching speed and low power consumption make it an ideal choice for many types of applications.

In summary, the SI4404DY-T1-E3 is an n-channel enhancement-mode field-effect transistor (FET) processed with an advanced high-voltage CMOS technology specifically designed to offer low RDS(ON), optimized Qg and Qgs, and fast switching performance. Its versatile design and fast switching speeds coupled with low power consumption make it an ideal choice for a wide variety of applications such as switching power supplies, amplifiers, logic circuits, and automotive applications.

The specific data is subject to PDF, and the above content is for reference