SI4493DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4493DY-T1-E3 is a UltraFET Power MOSFET transistor that falls under the category of transistors, FETs, and MOSFETs, with a single device package. This type of transistor has a wide range of use in various industries and has quickly become a prominent choice for many applications that require higher levels of electrical performance.

The SI4493DY-T1-E3 device is a member of the UltraFET Power MOSFET family and is designed for excellent on-state drain-to-source and gate-to-source performance. This particular type of transistor features a low on-state resistance and can switch at high speeds, making it an ideal choice for applications where fast switching of the load is preferred.

The SI4493DY-T1-E3 device is also capable of handling high voltages and temperatures, making it suitable for applications such as AC motor controllers, switches, solenoid drivers, DC-DC converters, battery discharge circuits, and more.

In terms of its working principle, the SI4493DY-T1-E3 is based on a three-terminal, complementary, symmetrical structure that uses an N type and P type field effect transistor (FET). Inside the transistor, there is an arrangement of four components—a semiconductor die, an insulated gate, a source, and a drain.

When a drain-to-source voltage is applied across the transistor, the electrically charged holes will diffuse from the source to the drain. This causes a depletion region between the drain and the source. This depletion region creates a barrier between the source terminals, allowing the gate control of current flow between the source and the drain.

To control the current flow, the gate voltage must be greater than the source voltage. If the gate voltage is greater than the source voltage, this will create an additional electric field, which will strengthen the depletion region even further. When the gate voltage reaches a certain threshold, known as the turn-on voltage, the transistor will switch into its on state.

Once the transistor is turned on, it will remain in this state until the gate voltage drops below the turn-off voltage, at which point the transistor will switch back into its off state. This type of transistor can also be used to create an inverted volume control, utilizing the transistor’s ability to alter the current path according to the gate voltage.

The SI4493DY-T1-E3 is a versatile and reliable transistor that can be used in a wide range of applications. Its ability to switch quickly and its ability to handle high voltages and temperatures makes it an ideal choice for many applications, especially AC motor controllers, DC-DC converters, and more.

The specific data is subject to PDF, and the above content is for reference