SI4435DYPBF Allicdata Electronics
Allicdata Part #:

SI4435DYPBF-ND

Manufacturer Part#:

SI4435DYPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 8A 8-SOIC
More Detail: P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
DataSheet: SI4435DYPBF datasheetSI4435DYPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4435DYPBF is a 30V N-channel, Enhancement Mode, 3A, logic level MOSFET commonly used for power applications. It provides many benefits over other types of traditional power MOSFETs due to its low capacitance and low on-state resistance (Rdson). This makes the SI4435DYPBF an ideal choice for applications that require high efficiency, low losses, and low noise. In this article, we will explore the application field and working principle of the SI4435DYPBF.

The most common application of the SI4435DYPBF is in power supply circuits, such as DC-DC converters and power amplifiers. DC-DC converters are typically used to provide a supply voltage that is either higher or lower than the input voltage and can be used to convert power from one voltage level to another. The SI4435DYPBF MOSFET is an ideal choice for this application as it features low on-state resistance and low capacitance, allowing for efficient conversion and low losses. This also makes it an ideal choice for power amplifiers, which require devices that can handle large current flow and still provide high efficiency.

The working principle of the SI4430DYPBF is based on a process known as the "metal-oxide-semiconductor field-effect transistor" (MOSFET) structure, in which a semiconductor material is used to control the flow of current between two terminals. A MOSFET has three main components: the Gate, the Drain, and the Source. The Gate is used to control the amount of current flowing through the device, while the Drain and Source are used as the terminals from which the current flows. The SI4430DYPBF operates by using a small amount of voltage applied to the Gate to turn the device "on", allowing a larger current to flow between the Drain and Source.

The SI4430DYPBF can be used in a variety of circuits, ranging from switching amplifiers to power control. In its simplest form, the device can be used as a switch. This is done by applying a voltage to the Gate that is higher than the voltage at the Drain and Source, turning it "on" and allowing current to flow. This can then be used to switch on a wide variety of loads or to control the flow of current to a specific load. This type of circuit is used in a variety of applications, such as motor controllers, lighting controls, and power supplies.

The SI4435DYPBF can also be used in more advanced applications, such as voltage control. Using the gate voltage, it is possible to precisely control the output voltage of a power supply. This is done by applying a voltage to the Gate that is higher than the voltage at the Drain and Source and then changing the source voltage so that the voltage at the drain is the same as the source voltage. This type of circuit is often used in applications such as computers, medical equipment, and other ultra-precise voltage control applications. In addition, the SI4435DYPBF can be used to create high-efficiency buck-converter circuits for step-down power conversion applications.

The SI4435DYPBF is a popular choice for power applications due to its low on-state resistance and low capacitance, allowing for efficient operation and low losses. Its ability to be used in a variety of applications, from switching amplifiers to voltage control, makes it a versatile device for many applications. Its simple working principle based on the MOSFET structure ensures that it is easy to use and understand.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI44" Included word is 40
Part Number Manufacturer Price Quantity Description
SI4470EY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 60V 9A 8-SOIC...
SI4463-B0B-FM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI4401DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 40V 8.7A 8-SO...
SI4420BDY-T1-GE3 Vishay Silic... 0.26 $ 1000 MOSFET N-CH 30V 9.5A 8-SO...
SI4448DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 12V 50A 8-SOI...
SI4423DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 10A 8-SOI...
SI4447DY-T1-GE3 Vishay Silic... -- 2500 MOSFET P-CH 40V 3.3A 8-SO...
SI4442DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 15A 8-SOI...
SI4463CDY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CHAN 2.5V SO8P-C...
SI4430BDY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 14A 8-SOI...
SI4455DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 150V 2A 8-SOP...
SI4431CDY-T1-E3 Vishay Silic... 0.35 $ 1000 MOSFET P-CH 30V 9A 8SOICP...
SI4431BDY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 5.7A 8SOI...
SI4410DY Infineon Tec... -- 1000 MOSFET N-CH 30V 10A 8-SOI...
SI4410DYPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 10A 8-SOI...
SI4466DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 20V 9.5A 8-SO...
SI4421DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 10A 8-SOI...
SI4464-B1B-FMR Silicon Labs -- 1000 IC RF TXRX+MCU ISM ...
SI4412ADY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 5.8A 8-SO...
SI4409DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 150V 1.3A 8-S...
SI4401BDY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 40V 8.7A 8-SO...
SI4409DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 150V 1.3A 8-S...
SI4472DY-T1-E3 Vishay Silic... -- 2500 MOSFET N-CH 150V 7.7A 8-S...
SI4420DYPBF Infineon Tec... -- 1000 MOSFET N-CH 30V 12.5A 8-S...
SI4420DY Infineon Tec... -- 1000 MOSFET N-CH 30V 12.5A 8-S...
SI4411DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 9A 8-SOIC...
SI4453DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 10A 8-SOI...
SI4411DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 9A 8-SOIC...
SI4420-D1-FT Silicon Labs -- 543 IC RF TXRX ISM ...
SI4427BDY-T1-E3 Vishay Silic... -- 2500 MOSFET P-CH 30V 9.7A 8-SO...
SI4461-B1B-FMR Silicon Labs -- 7500 IC RF TXRX+MCU ISM ...
SI4421-A1-FTR Silicon Labs -- 1000 IC RF TXRX ISM ...
SI4426DY-T1-GE3 Vishay Silic... 0.49 $ 1000 MOSFET N-CH 20V 6.5A 8-SO...
SI4493DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 10A 8SOIC...
SI4455DY-T1-E3 Vishay Silic... -- 2500 MOSFET P-CH 150V 2.8A 8-S...
SI4455-C2A-GM Silicon Labs -- 1190 IC RF TXRX+MCU ISM ...
SI4456DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 33A 8-SOI...
SI4463BDY-T1-E3 Vishay Silic... -- 52500 MOSFET P-CH 20V 9.8A 8-SO...
SI4420DYTRPBF Infineon Tec... -- 4000 MOSFET N-CH 30V 12.5A 8-S...
SI4426DY-T1-E3 Vishay Silic... 0.49 $ 1000 MOSFET N-CH 20V 6.5A 8-SO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics