Allicdata Part #: | SI4435DYPBF-ND |
Manufacturer Part#: |
SI4435DYPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 8A 8-SOIC |
More Detail: | P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO |
DataSheet: | SI4435DYPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2320pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
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The SI4435DYPBF is a 30V N-channel, Enhancement Mode, 3A, logic level MOSFET commonly used for power applications. It provides many benefits over other types of traditional power MOSFETs due to its low capacitance and low on-state resistance (Rdson). This makes the SI4435DYPBF an ideal choice for applications that require high efficiency, low losses, and low noise. In this article, we will explore the application field and working principle of the SI4435DYPBF.
The most common application of the SI4435DYPBF is in power supply circuits, such as DC-DC converters and power amplifiers. DC-DC converters are typically used to provide a supply voltage that is either higher or lower than the input voltage and can be used to convert power from one voltage level to another. The SI4435DYPBF MOSFET is an ideal choice for this application as it features low on-state resistance and low capacitance, allowing for efficient conversion and low losses. This also makes it an ideal choice for power amplifiers, which require devices that can handle large current flow and still provide high efficiency.
The working principle of the SI4430DYPBF is based on a process known as the "metal-oxide-semiconductor field-effect transistor" (MOSFET) structure, in which a semiconductor material is used to control the flow of current between two terminals. A MOSFET has three main components: the Gate, the Drain, and the Source. The Gate is used to control the amount of current flowing through the device, while the Drain and Source are used as the terminals from which the current flows. The SI4430DYPBF operates by using a small amount of voltage applied to the Gate to turn the device "on", allowing a larger current to flow between the Drain and Source.
The SI4430DYPBF can be used in a variety of circuits, ranging from switching amplifiers to power control. In its simplest form, the device can be used as a switch. This is done by applying a voltage to the Gate that is higher than the voltage at the Drain and Source, turning it "on" and allowing current to flow. This can then be used to switch on a wide variety of loads or to control the flow of current to a specific load. This type of circuit is used in a variety of applications, such as motor controllers, lighting controls, and power supplies.
The SI4435DYPBF can also be used in more advanced applications, such as voltage control. Using the gate voltage, it is possible to precisely control the output voltage of a power supply. This is done by applying a voltage to the Gate that is higher than the voltage at the Drain and Source and then changing the source voltage so that the voltage at the drain is the same as the source voltage. This type of circuit is often used in applications such as computers, medical equipment, and other ultra-precise voltage control applications. In addition, the SI4435DYPBF can be used to create high-efficiency buck-converter circuits for step-down power conversion applications.
The SI4435DYPBF is a popular choice for power applications due to its low on-state resistance and low capacitance, allowing for efficient operation and low losses. Its ability to be used in a variety of applications, from switching amplifiers to voltage control, makes it a versatile device for many applications. Its simple working principle based on the MOSFET structure ensures that it is easy to use and understand.
The specific data is subject to PDF, and the above content is for reference
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